{"created":"2023-05-15T11:58:59.062946+00:00","id":5222,"links":{},"metadata":{"_buckets":{"deposit":"c895385c-d9bd-4048-a52c-07cd2ef80534"},"_deposit":{"created_by":3,"id":"5222","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5222"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00005222","sets":["8:9"]},"author_link":["21058","21061","21064","21065","21062","20416","21066","21063","21060"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-03-31","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageEnd":"3561","bibliographicPageStart":"3557","bibliographicVolumeNumber":"519","bibliographic_titles":[{"bibliographic_title":"Thin Solid Films"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Thin films of indium tin oxide (ITO) sputter-deposited by dc-plasma containing deuterium on glass substrate without any heat treatments exhibited gradual lowering in electrical resistivity with increasing the deuterium content [D2] in plasma gas by 1% and then demonstrated a jump in resistivity by further increase of [D2] than 1%. X-ray photoelectron spectroscopy revealed that hydroxyl-bonded oxygen in ITO grew continuingly with [D2]. Deuterium positioned at the interstitial site increased almost quantitatively with increasing [D2]. Rutherford backscattering spectroscopy showed gradual reduction in the oxygen content of ITO with increasing [D2] by 1% and then demonstrated an abrupt increase of the oxygen content with the increase of [D2] than 1%. The films with [D2] < 1% were oxygen deficient, but those with [D2] > 1% were excess of oxygen. The most oxygen deficient film of [D2] = 1% was the most conductive. Behavior in the resistivity with [D2] looks parallel to that in the oxygen content. A lower resistivity of the films corresponded well to oxygen vacancy rather than hydrogen interstitial.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_link_62":{"attribute_name":"研究者情報","attribute_value_mlt":[{"subitem_link_url":"https://hyokadb02.jimu.kyutech.ac.jp/html/102_ja.html"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1016/j.tsf.2011.01.249","subitem_relation_type_select":"DOI"}}]},"item_21_relation_14":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://doi.org/10.1016/j.tsf.2011.01.249"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.tsf.2011.01.249","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2011 Elsevier B.V. All rights reserved."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00863068","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0040-6090","subitem_source_identifier_type":"ISSN"}]},"item_21_text_28":{"attribute_name":"論文ID（連携）","attribute_value_mlt":[{"subitem_text_value":"10020166"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Department of Materials Science, Kyushu Institute of Technology"},{"subitem_text_value":"Department of Materials Science, Kyushu Institute of Technology"},{"subitem_text_value":"Department of Materials Science, Kyushu Institute of Technology/Liaoning Institute of Technology"},{"subitem_text_value":"Tandem Accelerator Complex, University of Tsukuba"},{"subitem_text_value":"Tandem Accelerator Complex, University of Tsukuba"},{"subitem_text_value":"National Institute for Materials Science"},{"subitem_text_value":"Department of Applied Physics, Fukuoka University"},{"subitem_text_value":"Department of Applied Physics, Fukuoka University"},{"subitem_text_value":"Kyushu Kyoritsu University"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"262"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Okada,  Koichi"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Kohiki, Shigemi","creatorNameLang":"en"},{"creatorName":"古曵, 重美","creatorNameLang":"ja"},{"creatorName":"コヒキ, シゲミ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Luo,  Suning"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sekiba,  Daiichiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ishii,  Satoshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mitome,  Masanori"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kohno,  Atsushi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tajiri,  Takayuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Shoji,  Fumiya"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-11-15"}],"displaytype":"detail","filename":"tsf_519_11.pdf","filesize":[{"value":"802.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"tsf_519_11.pdf","url":"https://kyutech.repo.nii.ac.jp/record/5222/files/tsf_519_11.pdf"},"version_id":"c0864384-e1a6-47fe-ac25-bb573ff5effc"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Interstitial hydrogen","subitem_subject_scheme":"Other"},{"subitem_subject":"Oxygen vacancy","subitem_subject_scheme":"Other"},{"subitem_subject":"Indium tin oxide thin films","subitem_subject_scheme":"Other"},{"subitem_subject":"X-ray photoelectron spectroscopy","subitem_subject_scheme":"Other"},{"subitem_subject":"Rutherford backscattering spectroscopy","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films"}]},"item_type_id":"21","owner":"3","path":["9"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-11-15"},"publish_date":"2017-11-15","publish_status":"0","recid":"5222","relation_version_is_last":true,"title":["Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2024-04-02T08:32:54.368911+00:00"}