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Adsorption and desorption of deuterium on partially oxidized Si(100) surfaces
http://hdl.handle.net/10228/296
http://hdl.handle.net/10228/2961c6ce407-e7d3-4dab-b568-fa931950e828
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
e155316.pdf (343.2 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2007-11-13 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Adsorption and desorption of deuterium on partially oxidized Si(100) surfaces | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
Tsurumaru, H.
× Tsurumaru, H.× Iwamaru, K.× Karato, T.× 稲永, 征司× 並木, 章 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Adsorption and desorption of deuterium are studied on the partially oxidized Si(100) surfaces. The partial oxygen coverage causes a decrease in the initial adsorption probability of D atoms. The observed D2 temperature-programmed-desorption (TPD) spectra comprise of multiple components depending on the oxygen coverage (θO). For θO=0.1ML the D2 TPD spectrum is deconvoluted into four components, each of which has a peak in the temperature region higher than the D2 TPD peaking at 780 K on the oxygen free surface. The highest TPD component with a peak around 1040 K is attributed to D adatoms on Si dimers backbonded by an oxygen atom. The other components are attributed to D adatoms on the nearest or second nearest sites of the O-backbonded Si dimers. D adatoms on the partially oxidized Si surfaces are abstracted by gaseous H atoms along two different abstraction pathways: one is the pathway along direct abstraction (ABS) to form HD molecules and the other is the pathway along indirect abstraction via collision-induced-desorption (CID) of D adatoms to form D2 molecules. The ABS pathway is less seriously affected by oxygen adatoms. On the other hand, the CID pathway receives a strong influence of oxygen adatoms since the range of surface temperature effective for CID is found to considerably shift to higher surface temperatures with increasing θO. Gradual substitution of D adatoms with H atoms during H exposure results in HD desorption along the CID pathway in addition to the ABS one. By employing a modulated beam technique the CID-related HD desorption is directly distinguished from the ABS-related one. | |||||
| 言語 | en | |||||
| 書誌情報 |
en : Physical review. Third series. B, Condensed matter and materials physics 巻 67, 号 15, p. 155316-1-155316-8, 発行日 2003-04-25 |
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| 出版社 | ||||||
| 出版者 | Published by the American Physical Society through the American Institute of Physics | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1103/PhysRevB.67.155316 | |||||
| CRID | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://cir.nii.ac.jp/crid/1050001338909629184 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA11187113 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | EISSN | |||||
| 収録物識別子 | 2469-9969 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 1098-0121 | |||||
| 著作権関連情報 | ||||||
| 権利情報 | Copyright ©2003 American Physical Society | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | silicon | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | oxidation | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | deuterium | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | adsorption | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | thermally stimulated desorption | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 査読の有無 | ||||||
| 値 | yes | |||||
