{"created":"2023-05-15T11:55:13.350033+00:00","id":53,"links":{},"metadata":{"_buckets":{"deposit":"4756cdec-7eb4-4923-9a7a-457f4bb99bc3"},"_deposit":{"created_by":3,"id":"53","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"53"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00000053","sets":["8:9"]},"author_link":["213","214","215","216","219"],"control_number":"53","item_1689815586683":{"attribute_name":"CRID","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://cir.nii.ac.jp/crid/1050001338909629184","subitem_relation_type_select":"URI"}}]},"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-04-25","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"15","bibliographicPageEnd":"155316-8","bibliographicPageStart":"155316-1","bibliographicVolumeNumber":"67","bibliographic_titles":[{"bibliographic_title":"Physical review. Third series. B, Condensed matter and materials physics","bibliographic_titleLang":"en"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Adsorption and desorption of deuterium are studied on the partially oxidized Si(100) surfaces. The partial oxygen coverage causes a decrease in the initial adsorption probability of D atoms. The observed D2 temperature-programmed-desorption (TPD) spectra comprise of multiple components depending on the oxygen coverage (θO). For θO=0.1ML the D2 TPD spectrum is deconvoluted into four components, each of which has a peak in the temperature region higher than the D2 TPD peaking at 780 K on the oxygen free surface. The highest TPD component with a peak around 1040 K is attributed to D adatoms on Si dimers backbonded by an oxygen atom. The other components are attributed to D adatoms on the nearest or second nearest sites of the O-backbonded Si dimers. D adatoms on the partially oxidized Si surfaces are abstracted by gaseous H atoms along two different abstraction pathways: one is the pathway along direct abstraction (ABS) to form HD molecules and the other is the pathway along indirect abstraction via collision-induced-desorption (CID) of D adatoms to form D2 molecules. The ABS pathway is less seriously affected by oxygen adatoms. On the other hand, the CID pathway receives a strong influence of oxygen adatoms since the range of surface temperature effective for CID is found to considerably shift to higher surface temperatures with increasing θO. Gradual substitution of D adatoms with H atoms during H exposure results in HD desorption along the CID pathway in addition to the ABS one. By employing a modulated beam technique the CID-related HD desorption is directly distinguished from the ABS-related one.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"lang":"ja"}]}]}]},"item_21_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"Published by the American Physical Society through the American Institute of Physics"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1103/PhysRevB.67.155316","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright ©2003 American Physical Society"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA11187113","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2469-9969","subitem_source_identifier_type":"EISSN"},{"subitem_source_identifier":"1098-0121","subitem_source_identifier_type":"PISSN"}]},"item_21_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Tsurumaru, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iwamaru, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Karato, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Inanaga, S.","creatorNameLang":"en"},{"creatorName":"稲永, 征司","creatorNameLang":"ja"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNames":[{}]}],"creatorNames":[{"creatorName":"Namiki, Akira","creatorNameLang":"en"},{"creatorName":"並木, 章","creatorNameLang":"ja"},{"creatorName":"ナミキ, アキラ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2007-11-13"}],"displaytype":"detail","filename":"e155316.pdf","filesize":[{"value":"343.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"e155316.pdf","url":"https://kyutech.repo.nii.ac.jp/record/53/files/e155316.pdf"},"version_id":"8b370b02-d40e-4efb-b71d-2c7bde3cbd4c"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"silicon","subitem_subject_scheme":"Other"},{"subitem_subject":"oxidation","subitem_subject_scheme":"Other"},{"subitem_subject":"deuterium","subitem_subject_scheme":"Other"},{"subitem_subject":"adsorption","subitem_subject_scheme":"Other"},{"subitem_subject":"thermally stimulated desorption","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Adsorption and desorption of deuterium on partially oxidized Si(100) surfaces","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Adsorption and desorption of deuterium on partially oxidized Si(100) surfaces","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["9"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-11-13"},"publish_date":"2007-11-13","publish_status":"0","recid":"53","relation_version_is_last":true,"title":["Adsorption and desorption of deuterium on partially oxidized Si(100) surfaces"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-04-02T08:38:11.516413+00:00"}