{"_buckets": {"deposit": "438787da-bd2d-43e6-aff8-0632d061eaac"}, "_deposit": {"created_by": 11, "id": "5702", "owners": [11], "pid": {"revision_id": 0, "type": "depid", "value": "5702"}, "status": "published"}, "_oai": {"id": "oai:kyutech.repo.nii.ac.jp:00005702", "sets": ["7"]}, "author_link": ["33836"], "item_20_alternative_title_17": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "高耐圧パワー半導体素子の宇宙放射線環境下故障率の計算手法に関する研究", "subitem_alternative_title_language": "ja"}]}, "item_20_date_granted_61": {"attribute_name": "学位授与年月日", "attribute_value_mlt": [{"subitem_dategranted": "2017-09-22"}]}, "item_20_degree_grantor_59": {"attribute_name": "学位授与機関", "attribute_value_mlt": [{"subitem_degreegrantor": [{"subitem_degreegrantor_name": "九州工業大学"}], "subitem_degreegrantor_identifier": [{"subitem_degreegrantor_identifier_name": "17104", "subitem_degreegrantor_identifier_scheme": "kakenhi"}]}]}, "item_20_degree_name_58": {"attribute_name": "学位名", "attribute_value_mlt": [{"subitem_degreename": "博士（工学）"}]}, "item_20_description_30": {"attribute_name": "目次", "attribute_value_mlt": [{"subitem_description": "1. Introduction||2. Power Semiconductor Devices||3. Cosmic Ray Induced Failure and Its Mechanism on Devices||4. Proposed Method to Calculation of Failure Rate||5. Results||6. Conclusion", "subitem_description_type": "Other"}]}, "item_20_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Space industry market and manufacturing have been increased for last decades. Furthermore, this trend seems will being increased. In order to practically use large size of manned and unmanned spacecraft for space missions, the total power generation of that will soon reach to range of Megawatts. Consequence of power demand increasing leads to the harness weight increasing of spacecraft in order to decrease power loss on harness. Harness mass is approximately 8% of spacecraft dry mass. Relation between harness mass and power demand of spacecraft was studied. For instance if the bus voltage increase by 100V, then harness mass reduction would be 75% of initial mass. Hence it seems that bus voltage increase will be the requirement for future space platforms. By using high voltage in bus system of spacecraft, there is a risk to destruct that power device due to the energetic particle penetration from the space. The well-known studies have been studied this failure which basically named “single event burn out for power devices and other electronics. In order to mitigate that risk, evaluate reliability then failure rate should be investigated against space radiation environment. The proton flux is the majority of energetic particle flux at low earth orbit. Therefore this thesis initially proposes and discusses method for space proton induced failure rate on high power device. The proposed method could be developed to be able to calculate failure rate of any power device under space radiation in various altitude. We selected low earth condition as basic example study for this thesis. Besides, high energetic particles can be the reason of power device failure in both terrestrial and space. In Chapter 1 of this thesis, satellite and space industry development trend which leads to the high power usage of next generation spacecraft was presented. Due to that trend, there will be appeared several aspect of spacecraft especially on the electrical power subsystem. The basic structure of electrical power subsystem was discussed as well. In Chapter 2 of this thesis, high voltage power semiconductor devices were basically presented. The electrical power subsystem of spacecraft works at DC voltage. A power management and distribution unit is the main part of energy controlling and conditioning in the electrical power system. The high voltage power devices are the main component of that power management distribution unit. Therefore high power semiconductor device will be the key component of the next generation spacecraft’s electrical power system. In Chapter 3 of this thesis, the cosmic ray induced failure and its mechanism were presented. This chapter includes two sections. First is that understanding about cosmic rays and its aspect in low earth orbit. Second is that semiconductor devices failure mechanism which induced by energetic particles. Proton silicon nuclear interaction, charge multiplication avalanche phenomena in the silicon device especially for power devices were explained as well. In Chapter 4 of this thesis, proposed method to calculate failure rate that induced by cosmic ray was presented. The proposed method in this study is expressed as formula and consists of three sections. First, T-CAD simulation, its result gives a threshold charge value for the device destruction, at various applied voltages case, which is triggered by energetic proton from space. The amount of threshold charge depends on applied voltage for high power device. Second, there is a probability of charge generation in silicon due to proton penetration. This probability function’s variation depends on the thickness of device and incident energy of proton. This function was defined before at library. Third consideration on this study is space proton flux data at low earth orbit which has been provided by astrophysics studies, assumed energy range of proton flux is 1MeV to 200GeV. Simulated device model was 3.3 kV PiN diode. At the end of this chapter ionization particle model of T-CAD simulation were briefly discussed. In chapter 5 of this thesis, calculated result by proposed was discussed. T-CAD simulation result, Proton flux function fitting result, proton induced failure cross section and failure rate calculation results were included this chapter. Shielding function obtained from literature. As seeing result aluminum shielding could not be proper protection against proton flux. Comparing results at FIT=1(one failure in 109hours) that typically used for power device’s allowed failure rate for commercial application, space applications power semiconductor devices failure rate was higher than terrestrial failure rate several magnitude. For instance in case of an application voltage of 3.3kV diode should be approximately 1.5kV for space application. This thesis concluded in Chapter 6. Conclusion were basically that we established method that consists of Destruction charge values from T-cad simulation, proton flux data and probability of energy deposition due to proton-silicon interaction from literature. From the result we can see that failure rate is apparently higher than terrestrial region case (assumed terrestrial FIT=1). By using Single Event burnout cross section σ(V), that we obtained can be used for any proton flux of environment. PiN diode model can be changed by any other power semiconductor devices. Proposed method can contribute to mitigate failure for high power devices’ usage and predict space application’s MW range of power systems reliability in future. In this study, T-CAD simulation electric field, that can affected by proton hitting position in silicon, was fixed at highest field of position. Crystal degradation due to space radiation was not considered as well.", "subitem_description_type": "Abstract"}]}, "item_20_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "九州工業大学博士学位論文 学位記番号：工博甲第445号 学位授与年月日：平成29年9月22日", "subitem_description_type": "Other"}]}, "item_20_description_60": {"attribute_name": "学位授与年度", "attribute_value_mlt": [{"subitem_description": "平成29年度", "subitem_description_type": "Other"}]}, "item_20_dissertation_number_62": {"attribute_name": "学位授与番号", "attribute_value_mlt": [{"subitem_dissertationnumber": "甲工第445号"}]}, "item_20_full_name_2": {"attribute_name": "著者(ヨミ)", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "33836", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "エルデンバートル ダッシュドンドック"}]}]}, "item_20_identifier_registration": {"attribute_name": "ID登録", "attribute_value_mlt": [{"subitem_identifier_reg_text": "10.18997/00006913", "subitem_identifier_reg_type": "JaLC"}]}, "item_20_select_64": {"attribute_name": "査読の有無", "attribute_value_mlt": [{"subitem_select_item": "yes"}]}, "item_20_text_34": {"attribute_name": "アドバイザー", "attribute_value_mlt": [{"subitem_text_value": "豊田, 和弘"}]}, "item_20_version_type_63": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Erdenebaatar Dashdondog", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-09-20"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "kou_k_445.pdf", "filesize": [{"value": "5.3 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 5300000.0, "url": {"label": "kou_k_445.pdf", "objectType": "fulltext", "url": "https://kyutech.repo.nii.ac.jp/record/5702/files/kou_k_445.pdf"}, "version_id": "550c944a-fd26-495e-b0c9-ed4108acbadd"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "High voltage device", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Failure rate", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Single event burnout", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Proton flux", "subitem_subject_scheme": "Other"}, {"subitem_subject": "TCAD simulation", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Radiation effects", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "doctoral thesis", "resourceuri": "http://purl.org/coar/resource_type/c_db06"}]}, "item_title": "Failure Rate Calculation Method for High Voltage Semiconductor Devices under Space Radiation Environments", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Failure Rate Calculation Method for High Voltage Semiconductor Devices under Space Radiation Environments", "subitem_title_language": "en"}]}, "item_type_id": "20", "owner": "11", "path": ["7"], "permalink_uri": "https://doi.org/10.18997/00006913", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2018-09-20"}, "publish_date": "2018-09-20", "publish_status": "0", "recid": "5702", "relation": {}, "relation_version_is_last": true, "title": ["Failure Rate Calculation Method for High Voltage Semiconductor Devices under Space Radiation Environments"], "weko_shared_id": -1}