@article{oai:kyutech.repo.nii.ac.jp:00005756,
 author = {Sasama,  Yosuke and Yamaguchi,  Takahide and Tanaka, Masashi and 田中, 将嗣 and Takeya,  Hiroyuki and Takano,  Yoshihiko},
 issue = {11},
 journal = {Journal of the Physical Society of Japan},
 month = {Nov},
 note = {We fabricated ionic-liquid-gated field-effect transistors on the hydrogen-terminated (111)-oriented surface of undoped silicon. Ion implantation underneath electrodes leads to good ohmic contacts, which persist at low temperatures down to 1.4 K. The sheet resistance of the channel decreases by more than five orders of magnitude as the gate voltage is changed from 0 to −1.6 V at 220 K. This is caused by the accumulation of hole carriers. The sheet resistance shows thermally activated behavior at temperatures below 10 K, which is attributed to hopping transport of the carriers. The activation energy decreases towards zero with increasing carrier density, suggesting the approach to an insulator–metal transition. We also report the variation of device characteristics induced by repeated sweeps of the gate voltage.},
 pages = {114703--114703},
 title = {Low-Temperature Carrier Transport in Ionic-Liquid-Gated Hydrogen-Terminated Silicon},
 volume = {86},
 year = {2017},
 yomi = {タナカ, マサシ}
}