{"created":"2023-05-15T11:59:22.394147+00:00","id":5756,"links":{},"metadata":{"_buckets":{"deposit":"83c2e4b6-f2e9-4c7a-af09-4a5ad7a2cee2"},"_deposit":{"created_by":3,"id":"5756","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5756"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00005756","sets":["8:9"]},"author_link":["23441","22595","23438","23442","23439"],"control_number":"5756","item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-11-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageEnd":"114703","bibliographicPageStart":"114703","bibliographicVolumeNumber":"86","bibliographic_titles":[{"bibliographic_title":"Journal of the Physical Society of Japan"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We fabricated ionic-liquid-gated field-effect transistors on the hydrogen-terminated (111)-oriented surface of undoped silicon. Ion implantation underneath electrodes leads to good ohmic contacts, which persist at low temperatures down to 1.4 K. The sheet resistance of the channel decreases by more than five orders of magnitude as the gate voltage is changed from 0 to −1.6 V at 220 K. This is caused by the accumulation of hole carriers. The sheet resistance shows thermally activated behavior at temperatures below 10 K, which is attributed to hopping transport of the carriers. The activation energy decreases towards zero with increasing carrier density, suggesting the approach to an insulator–metal transition. We also report the variation of device characteristics induced by repeated sweeps of the gate voltage.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_link_62":{"attribute_name":"研究者情報","attribute_value_mlt":[{"subitem_link_url":"https://hyokadb02.jimu.kyutech.ac.jp/html/100001006_ja.html"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"日本物理学会"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7566/JPSJ.86.114703","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (c)  2017 The Physical Society of Japan"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00704814","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1347-4073","subitem_source_identifier_type":"EISSN"},{"subitem_source_identifier":"0031-9015","subitem_source_identifier_type":"PISSN"}]},"item_21_text_28":{"attribute_name":"論文ID（連携）","attribute_value_mlt":[{"subitem_text_value":"10308970"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"WPI-MANA, National Institute for Materials Science/ Graduate School of Pure and Applied Sciences, University of Tsukuba"},{"subitem_text_value":"WPI-MANA, National Institute for Materials Science/ Graduate School of Pure and Applied Sciences, University of Tsukuba"},{"subitem_text_value":"WPI-MANA, National Institute for Materials Science/ Graduate School of Engineering, Kyushu Institute of Technology"},{"subitem_text_value":"WPI-MANA, National Institute for Materials Science"},{"subitem_text_value":"WPI-MANA, National Institute for Materials Science/ Graduate School of Pure and Applied Sciences, University of Tsukuba"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"6333"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sasama,  Yosuke","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yamaguchi,  Takahide","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Tanaka, Masashi","creatorNameLang":"en"},{"creatorName":"田中, 将嗣","creatorNameLang":"ja"},{"creatorName":"タナカ, マサシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{},{}]},{"creatorNames":[{"creatorName":"Takeya,  Hiroyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takano,  Yoshihiko","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-11-15"}],"displaytype":"detail","filename":"scunit-2017_15.pdf","filesize":[{"value":"851.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"scunit-2017_15.pdf","url":"https://kyutech.repo.nii.ac.jp/record/5756/files/scunit-2017_15.pdf"},"version_id":"576b4fe7-67a5-4e68-a346-dcf2e5cefd76"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Low-Temperature Carrier Transport in Ionic-Liquid-Gated Hydrogen-Terminated Silicon","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Low-Temperature Carrier Transport in Ionic-Liquid-Gated Hydrogen-Terminated Silicon","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["9"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2018-11-15"},"publish_date":"2018-11-15","publish_status":"0","recid":"5756","relation_version_is_last":true,"title":["Low-Temperature Carrier Transport in Ionic-Liquid-Gated Hydrogen-Terminated Silicon"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-04-02T08:38:08.371295+00:00"}