@article{oai:kyutech.repo.nii.ac.jp:00005883,
 author = {Kobayashi, Kenya and Sudo, Masaki and Omura, Ichiro and 大村, 一郎},
 journal = {Japanese Journal of Applied Physics},
 month = {Mar},
 note = {Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate–drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (Coss), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for Coss curves as three divided components. Output charge (Qoss) and stored energy (Eoss) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Qoss loss increased depending on switching frequency. This analysis reveals that Qoss may become a significant issue in next-generation high-efficiency FP-MOSFETs.},
 pages = {04FR14-1--04FR14-8},
 title = {Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET},
 volume = {57},
 year = {2018},
 yomi = {オオムラ, イチロウ}
}