{"created":"2023-05-15T11:59:27.910753+00:00","id":5883,"links":{},"metadata":{"_buckets":{"deposit":"b41aeac0-967b-486e-a566-87740276b555"},"_deposit":{"created_by":3,"id":"5883","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5883"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00005883","sets":["8:9"]},"author_link":["16176","24179","24180"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-03-23","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"04FR14-8","bibliographicPageStart":"04FR14-1","bibliographicVolumeNumber":"57","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate–drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (Coss), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for Coss curves as three divided components. Output charge (Qoss) and stored energy (Eoss) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Qoss loss increased depending on switching frequency. This analysis reveals that Qoss may become a significant issue in next-generation high-efficiency FP-MOSFETs.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"応用物理学会"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/JJAP.57.04FR14","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2018 The Japan Society of Applied Physics"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12295836","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1347-4065","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"ISSN"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Graduate School of Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan"},{"subitem_text_value":"Graduate School of Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan"},{"subitem_text_value":"Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, Kitakyushu 808-0196, Japan"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"6787"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kobayashi, Kenya"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sudo, Masaki"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Omura, Ichiro","creatorNameLang":"en"},{"creatorName":"大村, 一郎","creatorNameLang":"ja"},{"creatorName":"オオムラ, イチロウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-03-25"}],"displaytype":"detail","filename":"nperc105.pdf","filesize":[{"value":"1.8 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc105.pdf","url":"https://kyutech.repo.nii.ac.jp/record/5883/files/nperc105.pdf"},"version_id":"e7a99232-78c1-4ef2-b0c0-7ed533fedace"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET"}]},"item_type_id":"21","owner":"3","path":["9"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-03-25"},"publish_date":"2019-03-25","publish_status":"0","recid":"5883","relation_version_is_last":true,"title":["Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2024-04-02T08:39:32.446085+00:00"}