@inproceedings{oai:kyutech.repo.nii.ac.jp:00005906,
 author = {Ishibashi,  Kazuya and Kudo,  Kazuki and Nakashima,  Kazutoshi and Asai,  Yuki and Sakai,  Ken-ichiro and Deguchi, Hiroyuki and 出口, 博之 and Yoshitake,  Tsuyoshi},
 book = {JJAP Conference Proceedings},
 month = {Jul},
 note = {Fe3Si/FeSi2/Fe3Si trilayered junctions were fabricated by facing targets direct-current sputtering combined with a mask method, and the spin valve signals of the junctions were studied in the temperature range from 50 to 300 K. Whereas the magnetoresistance ratio of giant magnetoresistance and tunnel magnetoresistance junctions monotonically increases with decreasing temperature, that of our samples has the maximum value around 80 K and decreases with decreasing temperature at lower than 80 K, which might be due to an increase in the electrical conductivity mismatch between the metallic Fe3Si layers and semiconducting FeSi2 interlayer in the low temperature range., Asia-Pacific Conference on Semiconducting Silicides and Related Materials — Science and Technology Towards Sustainable Electronics (APAC Silicide 2016), July 16-18, 2016, Fukuoka, Japan},
 pages = {011501-1--011501-8},
 publisher = {応用物理学会},
 title = {Temperature-dependent Magnetoresistance Effects in Fe3Si/FeSi2/Fe3Si Trilayered Spin Valve Junctions},
 volume = {5},
 year = {2016},
 yomi = {デグチ, ヒロユキ}
}