{"created":"2023-05-15T11:59:34.923136+00:00","id":6069,"links":{},"metadata":{"_buckets":{"deposit":"ab275e9b-cd06-412c-9fcd-45b8fb616740"},"_deposit":{"created_by":3,"id":"6069","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"6069"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00006069","sets":["8:24"]},"author_link":["24909","24908","24910","16176","24912","21156"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-07-04","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"469","bibliographicPageStart":"465","bibliographicVolumeNumber":"76-77","bibliographic_titles":[{"bibliographic_title":"Microelectronics Reliability"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The shoot-through phenomenon has not been fully discussed for high-power inverters with IGBTs. This is because a negative gate voltage is applied to IGBTs during off states. Recently, attention is paid to an improved gate driver with only a positive gate voltage in order to meet demands for simplification, integration, and reduction in power consumption as well as in cost of the gate driver. Moreover, the threshold voltage of the next-generation IGBT will decrease with microfabrication techniques of the gate structure. This will make the shoot-through phenomenon severer and degrade the inverter reliability with the next-generation IGBTs. The influence of the parasitic parameters in both the IGBT and circuit on the shoot-through mechanism has not been investigated so far.This paper clarifies the shoot-through mechanism and investigates the impact of the next generation IGBTs on the inverter reliability. The influence of the internal capacitance of IGBT including stray inductance on inverter reliability is experimentally confirmed.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1016/j.microrel.2017.06.087","subitem_relation_type_select":"DOI"}}]},"item_21_relation_14":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.microrel.2017.06.087","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Elsevier"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0026-2714","subitem_source_identifier_type":"ISSN"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Department of Life Science and System Engineering, Kyushu Institute of Technology"},{"subitem_text_value":"Department of Life Science and System Engineering, Kyushu Institute of Technology"},{"subitem_text_value":"Green Electronics Research Institute"},{"subitem_text_value":"Department of Electrical and Electronic Engineering, Tokyo Metropolitan University"},{"subitem_text_value":"Department of Life Science and System Engineering, Kyushu Institute of Technology"},{"subitem_text_value":"Green Electronics Research Institute"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"6485"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Abe, Seiya","creatorNameLang":"en"},{"creatorName":"安部, 征哉","creatorNameLang":"ja"},{"creatorName":"アベ, セイヤ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Hasegawa,  K."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsukuda,  M."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wada,  K."}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Omura, Ichiro","creatorNameLang":"en"},{"creatorName":"大村, 一郎","creatorNameLang":"ja"},{"creatorName":"オオムラ, イチロウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Ninomiya,  T."}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-07-04"}],"displaytype":"detail","filename":"nperc94.pdf","filesize":[{"value":"350.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc94.pdf","url":"https://kyutech.repo.nii.ac.jp/record/6069/files/nperc94.pdf"},"version_id":"a1cf92c9-efec-44c7-ab31-b249322391b2"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-07-04"},"publish_date":"2019-07-04","publish_status":"0","recid":"6069","relation_version_is_last":true,"title":["Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-10-25T10:49:01.186757+00:00"}