@article{oai:kyutech.repo.nii.ac.jp:00006257,
 author = {Guo,  Zhanglin and Teo,  Siowhwa and Xu,  Zhenhua and Zhang,  Chu and Kamata,  Yusuke and Hayase, Shuzi and 早瀬, 修二 and Ma, Tingli and 馬, 廷麗},
 journal = {Journal of Materials Chemistry A},
 month = {Dec},
 note = {In this work, a simple interface engineering process for SnO2 electron selective layer (ESL) surface passivation employing a SnCl2 solution is introduced, which has successfully reduced the energy loss for a high open-circuit voltage (Voc) output and consequently improved the performance of all-inorganic CsPbIBr2 perovskite solar cells (PSCs). It was found that surface passivation can effectively suppress the recombination process at the interface between the perovskite and SnO2 due to higher recombination resistance. The shorter PL decay time is attributed to the excellent electron extraction from the perovskite film. After optimizing surface passivation, the power conversion efficiency (PCE) was enhanced from 4.73% to 7.00% and a high Voc of 1.31 V was achieved, which is one of the highest Voc values reported for inorganic Cs-based PSCs. More importantly, the passivated SnO2 based device retains 95.5% of its initial performance at 90 °C in air without encapsulation. This work provides a simple and efficient interface engineering method to improve the Voc and efficiency of all-inorganic PSCs.},
 pages = {1227--1232},
 title = {Achievable high Voc of carbon based all-inorganic CsPbIBr2 perovskite solar cells through interface engineering},
 volume = {7},
 year = {2018},
 yomi = {ハヤセ, シュウジ and マ, テイレイ}
}