@inproceedings{oai:kyutech.repo.nii.ac.jp:00006295,
 author = {Torimi,  Satoshi and Obiyama,  Yoshiki and Tsukuda,  Masanori and Omura, Ichiro and 大村, 一郎},
 book = {2019 International Conference on Solid State Devices and Materials (SSDM2019)},
 month = {Sep},
 note = {Forward bias degradation caused by basal plane dislocations (BPDs) in the substrate is the critical issue in the Sic bipolar devices operated under high current density conditions. In this work, we proposed the calculation model of the current density in the PiN diode using the injection hole density at the buffer/substrate interface to enable the forward bias degradation prediction. We found out the critical current density which occurs stacking faults expansion from BPDs at buffer/substrate interface could be improved by shortening the carrier lifetime of the substrate or densifying the dopant concentration of the buffer layer. In the case of the conversion of BPD to threading edge dislocation (TED) located inside the Sic substrate, we estimated more than twice improvement of critical current density using the BPD-TED conversion effect of the Si-vapor etching process., International Conference on Solid State Devices and Materials (SSDM2019), September 2-5, 2019, Nagoya University, Japan},
 publisher = {応用物理学会},
 title = {Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer},
 year = {2019},
 yomi = {オオムラ, イチロウ}
}