{"created":"2023-05-15T11:59:43.701889+00:00","id":6295,"links":{},"metadata":{"_buckets":{"deposit":"7d87f4cb-2b72-404d-b737-34c1faa48532"},"_deposit":{"created_by":3,"id":"6295","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"6295"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00006295","sets":["15:20"]},"author_link":["25958","25954","25956","16176","25955","25959","25960"],"item_23_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-09-04","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"PS-4-05","bibliographic_titles":[{"bibliographic_title":"2019 International Conference on Solid State Devices and Materials (SSDM2019)"}]}]},"item_23_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Forward bias degradation caused by basal plane dislocations (BPDs) in the substrate is the critical issue in the Sic bipolar devices operated under high current density conditions. In this work, we proposed the calculation model of the current density in the PiN diode using the injection hole density at the buffer/substrate interface to enable the forward bias degradation prediction. We found out the critical current density which occurs stacking faults expansion from BPDs at buffer/substrate interface could be improved by shortening the carrier lifetime of the substrate or densifying the dopant concentration of the buffer layer. In the case of the conversion of BPD to threading edge dislocation (TED) located inside the Sic substrate, we estimated more than twice improvement of critical current density using the BPD-TED conversion effect of the Si-vapor etching process.","subitem_description_type":"Abstract"}]},"item_23_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"International Conference on Solid State Devices and Materials (SSDM2019), September 2-5, 2019, Nagoya University, Japan","subitem_description_type":"Other"}]},"item_23_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Conference Paper","subitem_description_type":"Other"}]},"item_23_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"25958","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Torimi,  S."}]},{"nameIdentifiers":[{"nameIdentifier":"25959","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Obiyama,  Y."}]},{"nameIdentifiers":[{"nameIdentifier":"25960","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Tsukuda,  M."}]},{"affiliations":[{"affiliationNames":[{"affiliationName":"","lang":"ja"}],"nameIdentifiers":[]}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{"nameIdentifier":"16176","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"10510670","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000010510670"},{"nameIdentifier":"7003814580","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=7003814580"},{"nameIdentifier":"69","nameIdentifierScheme":"九工大研究者情報","nameIdentifierURI":"https://hyokadb02.jimu.kyutech.ac.jp/html/69_ja.html"}],"names":[{"name":"Omura, Ichiro","nameLang":"en"},{"name":"大村, 一郎","nameLang":"ja"},{"name":"オオムラ, イチロウ","nameLang":"ja-Kana"}]}]},"item_23_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"応用物理学会"}]},"item_23_relation_14":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://www.ssdm.jp/2019/index.html"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.ssdm.jp/2019/index.html","subitem_relation_type_select":"URI"}}]},"item_23_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"The copyright of this paper belongs to The Japan Society of Applied Physics. Copyright (c) 2019 The Japan Society of Applied Physics"}]},"item_23_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_23_text_37":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu-shi, Fukuoka, 808-0196, Japan, 2181-2 Nakahime, Ohnohara-cho, Kanonji-shi, Kagawa, 769-1612, Japan"},{"subitem_text_value":"Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu-shi, Fukuoka, 808-0196, Japan"},{"subitem_text_value":"Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu-shi, Fukuoka, 808-0196, Japan"},{"subitem_text_value":"Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu-shi, Fukuoka, 808-0196, Japan"}]},"item_23_text_62":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"8022"}]},"item_23_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Torimi,  Satoshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Obiyama,  Yoshiki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsukuda,  Masanori"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Omura, Ichiro","creatorNameLang":"en"},{"creatorName":"大村, 一郎","creatorNameLang":"ja"},{"creatorName":"オオムラ, イチロウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-06"}],"displaytype":"detail","filename":"nperc130.pdf","filesize":[{"value":"855.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc130.pdf","url":"https://kyutech.repo.nii.ac.jp/record/6295/files/nperc130.pdf"},"version_id":"9b6a57b7-4760-4a2c-b4ee-0d5c2c8e80d7"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer"}]},"item_type_id":"23","owner":"3","path":["20"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-01-06"},"publish_date":"2020-01-06","publish_status":"0","recid":"6295","relation_version_is_last":true,"title":["Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T10:49:20.029054+00:00"}