@article{oai:kyutech.repo.nii.ac.jp:00000063,
 author = {Bakmiwewa, P and Hori, A and Satake, Akihiro and 佐竹, 昭泰 and Fujiwara, Kenzo and 藤原, 賢三},
 issue = {2-4},
 journal = {Physica E: Low-dimensional Systems and Nanostructures},
 month = {Mar},
 note = {Temperature dependence of the electroluminescence (EL) spectral intensity is investigated in thesuper-bright green InGaN single-quantum-well diode under low injection currents down to 0.01 mA. It isfound that a temperature dependent variation pattern of the EL efficiency under very low and highinjection currents shows a drastic difference. That is, when the current is low and thus the forward drivingvoltage is small, the EL intensity persists to increase with decreasing temperature due to the reducednonradiative recombinations and the efficient carrier capture by the active region. On the other hand,when the injection current is high and the forward voltage is large, the EL intensity is significantlyreduced at temperatures below 100 K. This unique EL efficiency variation pattern with temperature andcurrent is explained by external field effects due to the driving forward bias in the presence of internal(piezo and spontaneous polarization) fields.},
 pages = {636--640},
 title = {Temperature-dependent electroluminescence anomalies influenced by injection current level in InGaN single-quantum-well diodes},
 volume = {21},
 year = {2004},
 yomi = {サタケ, アキヒロ and フジワラ, ケンゾウ}
}