{"created":"2023-05-15T11:55:13.757775+00:00","id":63,"links":{},"metadata":{"_buckets":{"deposit":"e896a300-b10c-43ea-93bb-925212d7ce21"},"_deposit":{"created_by":3,"id":"63","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"63"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00000063","sets":["8:24"]},"author_link":["247","248","252","1138"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2-4","bibliographicPageEnd":"640","bibliographicPageStart":"636","bibliographicVolumeNumber":"21","bibliographic_titles":[{"bibliographic_title":"Physica E: Low-dimensional Systems and Nanostructures"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Temperature dependence of the electroluminescence (EL) spectral intensity is investigated in thesuper-bright green InGaN single-quantum-well diode under low injection currents down to 0.01 mA. It isfound that a temperature dependent variation pattern of the EL efficiency under very low and highinjection currents shows a drastic difference. That is, when the current is low and thus the forward drivingvoltage is small, the EL intensity persists to increase with decreasing temperature due to the reducednonradiative recombinations and the efficient carrier capture by the active region. On the other hand,when the injection current is high and the forward voltage is large, the EL intensity is significantlyreduced at temperatures below 100 K. This unique EL efficiency variation pattern with temperature andcurrent is explained by external field effects due to the driving forward bias in the presence of internal(piezo and spontaneous polarization) fields.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"affiliationName":"","lang":"ja"}],"nameIdentifiers":[]}],"familyNames":[{"familyName":"Fujiwara","familyNameLang":"en"},{"familyName":"藤原","familyNameLang":"ja"},{"familyName":"フジワラ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Kenzo","givenNameLang":"en"},{"givenName":"賢三","givenNameLang":"ja"},{"givenName":"ケンゾウ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"1138","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"90243980","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000090243980"},{"nameIdentifier":"7403468236","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=7403468236"}],"names":[{"name":"Fujiwara, Kenzo","nameLang":"en"},{"name":"藤原, 賢三","nameLang":"ja"},{"name":"フジワラ, ケンゾウ","nameLang":"ja-Kana"}]},{"affiliations":[{"affiliationNames":[{"affiliationName":"","lang":"ja"}],"nameIdentifiers":[]}],"familyNames":[{"familyName":"Satake","familyNameLang":"en"},{"familyName":"佐竹","familyNameLang":"ja"},{"familyName":"サタケ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Akihiro","givenNameLang":"en"},{"givenName":"昭泰","givenNameLang":"ja"},{"givenName":"アキヒロ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"252","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"90325572","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000090325572"},{"nameIdentifier":"56259812400","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=56259812400"},{"nameIdentifier":"86","nameIdentifierScheme":"九工大研究者情報","nameIdentifierURI":"https://hyokadb02.jimu.kyutech.ac.jp/html/86_ja.html"}],"names":[{"name":"Satake, Akihiro","nameLang":"en"},{"name":"佐竹, 昭泰","nameLang":"ja"},{"name":"サタケ, アキヒロ","nameLang":"ja-Kana"}]}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier　　　　　"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.physe.2003.11.094","subitem_relation_type_select":"DOI"}}]},"item_21_relation_14":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://www.sciencedirect.com/science/journal/13869477"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.sciencedirect.com/science/journal/13869477","subitem_relation_type_select":"URI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2003 Elsevier B.V."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1386-9477","subitem_source_identifier_type":"ISSN"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Department of Electrical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu, Fukuoka 804-8550, Japan"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Bakmiwewa, P"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hori, A"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Satake, Akihiro","creatorNameLang":"en"},{"creatorName":"佐竹, 昭泰","creatorNameLang":"ja"},{"creatorName":"サタケ, アキヒロ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Fujiwara, Kenzo","creatorNameLang":"en"},{"creatorName":"藤原, 賢三","creatorNameLang":"ja"},{"creatorName":"フジワラ, ケンゾウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2007-11-14"}],"displaytype":"detail","filename":"6040PHYSE_MSS11-PW-KF_final.pdf","filesize":[{"value":"538.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"6040PHYSE_MSS11-PW-KF_final.pdf","url":"https://kyutech.repo.nii.ac.jp/record/63/files/6040PHYSE_MSS11-PW-KF_final.pdf"},"version_id":"1b39f952-d0d1-4de6-9351-4c1f26bfc044"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Semiconductor quantum well","subitem_subject_scheme":"Other"},{"subitem_subject":"Electroluminescence","subitem_subject_scheme":"Other"},{"subitem_subject":"InGaN","subitem_subject_scheme":"Other"},{"subitem_subject":"LED","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Temperature-dependent electroluminescence anomalies influenced by injection current level in InGaN single-quantum-well diodes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Temperature-dependent electroluminescence anomalies influenced by injection current level in InGaN single-quantum-well diodes"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"公開日","attribute_value":"2007-11-14"},"publish_date":"2007-11-14","publish_status":"0","recid":"63","relation_version_is_last":true,"title":["Temperature-dependent electroluminescence anomalies influenced by injection current level in InGaN single-quantum-well diodes"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T08:28:11.467117+00:00"}