{"created":"2023-05-15T11:59:45.483917+00:00","id":6337,"links":{},"metadata":{"_buckets":{"deposit":"c903c8cb-b85b-4379-9bf9-f8c2c549a60e"},"_deposit":{"created_by":3,"id":"6337","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"6337"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00006337","sets":["15:20"]},"author_link":["26284","26285","26286","26287","26231"],"control_number":"6337","item_23_alternative_title_18":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Mosaic SRAM Cell TEGs with Intentionally-added Device Variability for Confirming the Ratio-less SRAM Operation","subitem_alternative_title_language":"en"}]},"item_23_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-06-13","bibliographicIssueDateType":"Issued"},"bibliographic_titles":[{"bibliographic_title":"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)","bibliographic_titleLang":"en"}]}]},"item_23_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"MOSAIC SRAM Cell TEGs consisting of memory cells having all combinations of gate sizes of transistors differing by two orders of magnitude were developed with 0.18 μm CMOS process to verify the operation margins for SRAM circuits. The measured results show the operation of the ratio-less SRAM is completely independent of the size of transistors in the memory cell.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_23_description_5":{"attribute_name":"備考","attribute_value_mlt":[{"subitem_description":"IEEE International Conference on Microelectronic Test Structures (ICMTS 2013), 25-28 March 2013, Osaka, Japan","subitem_description_type":"Other"}]},"item_23_link_61":{"attribute_name":"研究者情報","attribute_value_mlt":[{"subitem_link_url":"https://hyokadb02.jimu.kyutech.ac.jp/html/381_ja.html"}]},"item_23_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_23_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1109/ICMTS.2013.6528174","subitem_relation_type_select":"DOI"}}]},"item_23_relation_9":{"attribute_name":"ISBN","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"978-1-4673-4848-5","subitem_relation_type_select":"ISBN"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"978-1-4673-4845-4","subitem_relation_type_select":"ISBN"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"978-1-4673-4847-8","subitem_relation_type_select":"ISBN"}}]},"item_23_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright (c)  2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works."}]},"item_23_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_23_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1071-9032","subitem_source_identifier_type":"EISSN"},{"subitem_source_identifier":"1071-9032","subitem_source_identifier_type":"PISSN"}]},"item_23_text_28":{"attribute_name":"論文ID（連携）","attribute_value_mlt":[{"subitem_text_value":"10245959"}]},"item_23_text_62":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"8056"}]},"item_23_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAlternatives":[{}],"creatorNames":[{"creatorName":"Okamura, Hitoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAlternatives":[{}],"creatorNames":[{"creatorName":"Saito, Takahiko","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAlternatives":[{}],"creatorNames":[{"creatorName":"Goto, Hiroaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAlternatives":[{}],"creatorNames":[{"creatorName":"Yamamoto, Masahiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Nakamura, Kazuyuki","creatorNameLang":"en"},{"creatorName":"中村, 和之","creatorNameLang":"ja"},{"creatorName":"ナカムラ, カズユキ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-21"}],"displaytype":"detail","filename":"10245959.pdf","filesize":[{"value":"1.0 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"10245959.pdf","url":"https://kyutech.repo.nii.ac.jp/record/6337/files/10245959.pdf"},"version_id":"a6008258-45ea-42bb-a21f-284847032654"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SRAM","subitem_subject_scheme":"Other"},{"subitem_subject":"Variability","subitem_subject_scheme":"Other"},{"subitem_subject":"Ratio-less","subitem_subject_scheme":"Other"},{"subitem_subject":"Static Noise Margin","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Mosaic SRAM Cell TEGs with intentionally-added device variability for confirming the ratio-less SRAM operation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Mosaic SRAM Cell TEGs with intentionally-added device variability for confirming the ratio-less SRAM operation","subitem_title_language":"en"}]},"item_type_id":"23","owner":"3","path":["20"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-01-21"},"publish_date":"2020-01-21","publish_status":"0","recid":"6337","relation_version_is_last":true,"title":["Mosaic SRAM Cell TEGs with intentionally-added device variability for confirming the ratio-less SRAM operation"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-02-08T04:11:28.045613+00:00"}