@article{oai:kyutech.repo.nii.ac.jp:00000064,
 author = {Aizawa, H and Soejima, K and Hori, A and Satake, Akihiro and 佐竹, 昭泰 and Fujiwara, Kenzo and 藤原, 賢三},
 issue = {3},
 journal = {Physica status solidi. C, Current topics in solid state physics},
 month = {Feb},
 note = {Electroluminescence (EL) and photoluminescence (PL) properties have been investigated of the highbrightnessgreen InGaN single quantum well (SQW) diode over a wide temperature range (T = 15-300 K)and as a function of injection current level. When the necessary forward bias conditions to get a certaincurrent level are different, it is found the anomalous temperature-dependent EL efficiency varies quite differently.That is, when the current is low and thus the forward driving voltage is small, the EL quenchingobserved below 100 K for high injection current levels is less significant or even absent due to the efficientcarrier capture. This finding is consistent with decrease of the PL efficiency with increasing the biasover +2.5 V. These results indicate that the EL efficiency is significantly influenced by interplay of the internaland external fields effects on the carrier capture and escape processes in addition to the localizationphenomena caused by In fluctuations in the SQW layer.},
 pages = {589--593},
 title = {Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes},
 volume = {3},
 year = {2006},
 yomi = {サタケ, アキヒロ and フジワラ, ケンゾウ}
}