@article{oai:kyutech.repo.nii.ac.jp:00006441,
 author = {Mukuno,  Renji and Ishimaru, Manabu and 石丸, 学},
 issue = {10},
 journal = {Japanese Journal of Applied Physics},
 month = {Sep},
 note = {Molecular-dynamics simulations of the pressure-induced structural changes of amorphous Si have been performed using the Tersoff interatomic potential to examine the validity of this potential. Amorphous Si with a tetrahedral network was prepared by melt-quenching methods, and it was then compressed under isothermal–isobaric conditions. The changes of the atomic pair-distribution functions and static structure factors with increasing pressure were in agreement with those observed experimentally. The pressure-induced amorphous structures contained a short-range order similar to the β-tin and Imma structures. These results suggest that the Tersoff potential is suitable for describing the structural changes of amorphous Si under high pressure.},
 title = {Application of the Tersoff interatomic potential to pressure-induced polyamorphism of silicon},
 volume = {58},
 year = {2019},
 yomi = {イシマル, マナブ}
}