@article{oai:kyutech.repo.nii.ac.jp:00006460,
 author = {Ishito,  Ryuki and Ono,  Kota and Matsumoto, Satoshi and 松本, 聡},
 journal = {2019 IEEE CPMT Symposium Japan (ICSJ)},
 month = {Feb},
 note = {In this paper, we describe the wafer bonding technology Si (100) substrate and GaN/Si (111) substrate using surface activated bonding at room temperature and the removal technique for Si (111) substrate underneath the GaN and buffer layers for 3D power-supply on chip., 9th IEEE CPMT Symposium Japan (ICSJ2019), 18-20 November, 2019, Kyoto University, Kyoto, Japan},
 title = {Si (100)-GaN/Si (111) low temperature wafer bonding process for 3D power supply on chip},
 year = {2020},
 yomi = {マツモト, サトシ}
}