{"created":"2023-05-15T11:59:51.239850+00:00","id":6460,"links":{},"metadata":{"_buckets":{"deposit":"3c489ed5-9d8d-4505-ad60-79ee10b25677"},"_deposit":{"created_by":3,"id":"6460","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"6460"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00006460","sets":["8:24"]},"author_link":["27091","27090","27142"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-02-17","bibliographicIssueDateType":"Issued"},"bibliographic_titles":[{"bibliographic_title":"2019 IEEE CPMT Symposium Japan (ICSJ)"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In this paper, we describe the wafer bonding technology Si (100) substrate and GaN/Si (111) substrate using surface activated bonding at room temperature and the removal technique for Si (111) substrate underneath the GaN and buffer layers for 3D power-supply on chip.","subitem_description_type":"Abstract"}]},"item_21_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"9th IEEE CPMT Symposium Japan (ICSJ2019), 18-20 November, 2019, Kyoto University, Kyoto, Japan","subitem_description_type":"Other"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1109/ICSJ47124.2019.8998700","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2475-8418","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"2373-5449","subitem_source_identifier_type":"ISSN"}]},"item_21_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Kyushu Institute Technology"},{"subitem_text_value":"Kyushu Institute Technology"},{"subitem_text_value":"Kyushu Institute Technology"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"8172"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ishito,  Ryuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ono,  Kota"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Matsumoto, Satoshi","creatorNameLang":"en"},{"creatorName":"松本, 聡","creatorNameLang":"ja"},{"creatorName":"マツモト, サトシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-03-26"}],"displaytype":"detail","filename":"nperc145.pdf","filesize":[{"value":"987.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc145.pdf","url":"https://kyutech.repo.nii.ac.jp/record/6460/files/nperc145.pdf"},"version_id":"9dd50c54-6f3f-4f7a-b59b-ea936d536109"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Power-SoC","subitem_subject_scheme":"Other"},{"subitem_subject":"3D IC","subitem_subject_scheme":"Other"},{"subitem_subject":"Wafer bonding technology","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Si (100)-GaN/Si (111) low temperature wafer bonding process for 3D power supply on chip","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Si (100)-GaN/Si (111) low temperature wafer bonding process for 3D power supply on chip"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-03-26"},"publish_date":"2020-03-26","publish_status":"0","recid":"6460","relation_version_is_last":true,"title":["Si (100)-GaN/Si (111) low temperature wafer bonding process for 3D power supply on chip"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T07:33:15.559214+00:00"}