{"created":"2023-05-15T11:59:51.751153+00:00","id":6469,"links":{},"metadata":{"_buckets":{"deposit":"0a35b728-9214-487f-8dca-8da6f9e196df"},"_deposit":{"created_by":3,"id":"6469","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"6469"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00006469","sets":["8:24"]},"author_link":["27127","27128","27129","27130","1670","25466","6311"],"control_number":"6469","item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-09-25","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageEnd":"125501-12","bibliographicPageStart":"125501-1","bibliographicVolumeNumber":"126","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Considering the pivotal role of interfaces in controlling the performance of organic electronic devices, implications of metal/organic interfacial quality in a Schottky barrier diode (SBD) are investigated. The nature of metal/organic interfaces and the thin film quality of regioregular poly (3-hexylthiophene) based SBDs fabricated in different device architectures are investigated using experimental and theoretical modeling. The importance of oxidized aluminum nanostructures as an interlayer at the Schottky interface for the dramatic enhancement of the rectification ratio (>106 at ±5 V) has been demonstrated, which is attributed to suppressed leakage current due to the oxide layer and the formation of a charge double layer. Furthermore, electrical performances of all the SBDs were modeled in terms of an underlying particular phenomenon solely or with the combination of multiple physical phenomena. The combined modeling equation used in this work fits well for the different device architectures, which validates its generality in order to extract the device parameters.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_21_link_62":{"attribute_name":"研究者情報","attribute_value_mlt":[{"subitem_link_url":"https://hyokadb02.jimu.kyutech.ac.jp/html/332_ja.html"}]},"item_21_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.5109083","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2019 Author(s)."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"PISSN"},{"subitem_source_identifier":"1089-7550","subitem_source_identifier_type":"EISSN"}]},"item_21_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_21_text_28":{"attribute_name":"論文ID（連携）","attribute_value_mlt":[{"subitem_text_value":"10350045"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"8180"}]},"item_21_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kumari, 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シュウジ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorAffiliations":[{"affiliationNames":[{}]}],"creatorNames":[{"creatorName":"Pandey, Shyam Sudhir","creatorNameLang":"en"},{"creatorName":"パンディ, シャム スディル","creatorNameLang":"ja"}],"familyNames":[{},{}],"givenNames":[{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-03-31"}],"displaytype":"detail","filename":"10350045.pdf","filesize":[{"value":"1.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"10350045.pdf","url":"https://kyutech.repo.nii.ac.jp/record/6469/files/10350045.pdf"},"version_id":"e7081801-4bf4-4a76-9a78-bbaaec5eda0b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Organic Schottky Diode","subitem_subject_scheme":"Other"},{"subitem_subject":"Thermionic Emission","subitem_subject_scheme":"Other"},{"subitem_subject":"Space Charge Limiting Current","subitem_subject_scheme":"Other"},{"subitem_subject":"Trap States, Conjugated Polymer","subitem_subject_scheme":"Other"},{"subitem_subject":"Analytical Modeling","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Role of device architecture and AlOX interlayer in organic Schottky diodes and their interpretation by analytical modeling","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Role of device architecture and AlOX interlayer in organic Schottky diodes and their interpretation by analytical modeling","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-03-31"},"publish_date":"2020-03-31","publish_status":"0","recid":"6469","relation_version_is_last":true,"title":["Role of device architecture and AlOX interlayer in organic Schottky diodes and their interpretation by analytical modeling"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-04-24T07:30:06.755758+00:00"}