{"created":"2023-05-15T11:59:52.258530+00:00","id":6480,"links":{},"metadata":{"_buckets":{"deposit":"c269f441-cc39-4a03-b5fb-64e7cd37a256"},"_deposit":{"created_by":3,"id":"6480","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"6480"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00006480","sets":["15:20"]},"author_link":["16176","27282","27283","27284"],"item_23_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We monitored the current imbalance in a SiC-MOSFET chip under unclamped inductive switching condition by using our printed circuit board Rogowski coils. The current imbalance varied significantly from sample to sample. The SiC-MOSFET with a larger current imbalance was destroyed with lower avalanche current than other samples. It is assumed that the chip was destroyed due to partial temperature rise accompanying current concentration from current distribution and thermal simulation. The result shows that the current monitoring system is effective for analysis of avalanche robustness.","subitem_description_type":"Abstract"}]},"item_23_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"14th International Seminar on Power Semiconductors, August 29-31, 2018, Prague, Czech","subitem_description_type":"Other"}]},"item_23_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Conference Paper","subitem_description_type":"Other"}]},"item_23_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"ISPS 2018"}]},"item_23_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"no"}]},"item_23_text_37":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Kyushu Institute of Technology Kitakyushu, Japan"},{"subitem_text_value":"Kyushu Institute of Technology Kitakyushu, Japan"},{"subitem_text_value":"Kyushu Institute of Technology Kitakyushu, Japan"},{"subitem_text_value":"Kyushu Institute of Technology Kitakyushu, Japan"}]},"item_23_text_62":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"8194"}]},"item_23_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Arimoto,  T."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsukuda,  M."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Matsuura,  S."}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Omura, Ichiro","creatorNameLang":"en"},{"creatorName":"大村, 一郎","creatorNameLang":"ja"},{"creatorName":"オオムラ, イチロウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-04-03"}],"displaytype":"detail","filename":"nperc106.pdf","filesize":[{"value":"654.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc106.pdf","url":"https://kyutech.repo.nii.ac.jp/record/6480/files/nperc106.pdf"},"version_id":"7982684c-f0d9-4636-8ba1-99a14e1e5ebe"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SiC-MOSFET","subitem_subject_scheme":"Other"},{"subitem_subject":"Current Imbalance","subitem_subject_scheme":"Other"},{"subitem_subject":"Unclamped Inductive Switching (UIS)","subitem_subject_scheme":"Other"},{"subitem_subject":"Rogowski coil","subitem_subject_scheme":"Other"},{"subitem_subject":"Printed Circuit Board (PCB)","subitem_subject_scheme":"Other"},{"subitem_subject":"Thermal simulation","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Current Imbalance Monitoring in SiC-MOSFET under Unclamped Inductive Switching by Tiny PCB Rogowski Coil","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Current Imbalance Monitoring in SiC-MOSFET under Unclamped Inductive Switching by Tiny PCB Rogowski Coil"}]},"item_type_id":"23","owner":"3","path":["20"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-04-03"},"publish_date":"2020-04-03","publish_status":"0","recid":"6480","relation_version_is_last":true,"title":["Current Imbalance Monitoring in SiC-MOSFET under Unclamped Inductive Switching by Tiny PCB Rogowski Coil"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T10:48:58.620276+00:00"}