@article{oai:kyutech.repo.nii.ac.jp:00006700,
 author = {Tsukuda,  M. and Abe, Seiya and 安部, 征哉 and Hasegawa,  K. and Ninomiya,  T. and Omura, Ichiro and 大村, 一郎},
 journal = {Microelectronics Reliability},
 month = {Sep},
 note = {In this paper, we propose the criteria of bias voltage from parasitic capacitance and demonstrate the criteria in an experiment with the present IGBT. The bias voltage criteria are theoretically predicted for the new generation IGBT based on the scaling principle. For safe switching, the required gate voltage bias is predicted to be −1.2V or less for the present IGBTs and −6V or less is required to completely cancel the gate noise voltage. From the IGBT design, the bias voltage of scaling IGBT requires −2V to completely cancel the gate noise voltage.},
 pages = {482--485},
 title = {Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena},
 volume = {88-90},
 year = {2018},
 yomi = {アベ, セイヤ and オオムラ, イチロウ}
}