{"created":"2023-05-15T12:00:02.455990+00:00","id":6700,"links":{},"metadata":{"_buckets":{"deposit":"331107da-dbf4-42c3-ab9c-18bfde5b7383"},"_deposit":{"created_by":3,"id":"6700","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"6700"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00006700","sets":["8:24"]},"author_link":["28359","16176","28357","21156","28360"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-09-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"485","bibliographicPageStart":"482","bibliographicVolumeNumber":"88-90","bibliographic_titles":[{"bibliographic_title":"Microelectronics Reliability"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In this paper, we propose the criteria of bias voltage from parasitic capacitance and demonstrate the criteria in an experiment with the present IGBT. The bias voltage criteria are theoretically predicted for the new generation IGBT based on the scaling principle. For safe switching, the required gate voltage bias is predicted to be −1.2V or less for the present IGBTs and −6V or less is required to completely cancel the gate noise voltage. From the IGBT design, the bias voltage of scaling IGBT requires −2V to completely cancel the gate noise voltage.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.microrel.2018.06.026","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2018 Elsevier Ltd."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11538014","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0026-2714","subitem_source_identifier_type":"ISSN"}]},"item_21_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Advanced Power Devices Laboratory, Green Electronics Research Institute, Kitakyushu, Japan, Next Generation Power Electronics Research Center, Kyushu Institute of Technology, Kitakyushu, Japan"},{"subitem_text_value":"Next Generation Power Electronics Research Center, Kyushu Institute of Technology, Kitakyushu, Japan"},{"subitem_text_value":"Next Generation Power Electronics Research Center, Kyushu Institute of Technology, Kitakyushu, Japan"},{"subitem_text_value":"Advanced Power Devices Laboratory, Green Electronics Research Institute, Kitakyushu, Japan"},{"subitem_text_value":"Next Generation Power Electronics Research Center, Kyushu Institute of Technology, Kitakyushu, Japan"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"7485"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Tsukuda,  M."}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Abe, Seiya","creatorNameLang":"en"},{"creatorName":"安部, 征哉","creatorNameLang":"ja"},{"creatorName":"アベ, セイヤ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Hasegawa,  K."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ninomiya,  T."}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Omura, Ichiro","creatorNameLang":"en"},{"creatorName":"大村, 一郎","creatorNameLang":"ja"},{"creatorName":"オオムラ, イチロウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-09-30"}],"displaytype":"detail","filename":"nperc110.pdf","filesize":[{"value":"597.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc110.pdf","url":"https://kyutech.repo.nii.ac.jp/record/6700/files/nperc110.pdf"},"version_id":"59eaa444-3038-49c0-ad80-aaa8eede54e6"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Bias voltage","subitem_subject_scheme":"Other"},{"subitem_subject":"Gate","subitem_subject_scheme":"Other"},{"subitem_subject":"Shielding effect","subitem_subject_scheme":"Other"},{"subitem_subject":"IGBT","subitem_subject_scheme":"Other"},{"subitem_subject":"Shoot-through","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-09-30"},"publish_date":"2020-09-30","publish_status":"0","recid":"6700","relation_version_is_last":true,"title":["Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T10:49:01.440091+00:00"}