@inproceedings{oai:kyutech.repo.nii.ac.jp:00006786,
 author = {Gollapudi,  Srikanth and Omura, Ichiro and 大村, 一郎},
 book = {2020 International Conference on Solid State Devices and Materials (SSDM2020)},
 month = {Sep},
 note = {In this paper, we calculated the failure rate of high power semiconductor devices due to cosmic ray neutrons induced breakdown. This failure is found to occur during reverse bias condition at a voltage, which in practice well below the actual breakdown voltage of the device. Power semiconductor devices operating at airplane altitudes are more susceptible to this failure compare to the terrestrial operation., International Conference on Solid State Devices and Materials (SSDM2020), September 27-30, 2020, Toyama, Japan（新型コロナ感染拡大に伴い、現地開催中止）},
 publisher = {応用物理学会},
 title = {Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics},
 year = {2020},
 yomi = {オオムラ, イチロウ}
}