{"created":"2023-05-15T12:00:06.098250+00:00","id":6786,"links":{},"metadata":{"_buckets":{"deposit":"e7d797e4-da7f-48ca-a2f5-720153aa5c9d"},"_deposit":{"created_by":3,"id":"6786","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"6786"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00006786","sets":["15:20"]},"author_link":["16176","28762"],"item_23_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-09","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"D-9-06","bibliographic_titles":[{"bibliographic_title":"2020 International Conference on Solid State Devices and Materials (SSDM2020)"}]}]},"item_23_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In this paper, we calculated the failure rate of high power semiconductor devices due to cosmic ray neutrons induced breakdown. This failure is found to occur during reverse bias condition at a voltage, which in practice well below the actual breakdown voltage of the device. Power semiconductor devices operating at airplane altitudes are more susceptible to this failure compare to the terrestrial operation. ","subitem_description_type":"Abstract"}]},"item_23_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"International Conference on Solid State Devices and Materials (SSDM2020), September 27-30, 2020, Toyama, Japan（新型コロナ感染拡大に伴い、現地開催中止）","subitem_description_type":"Other"}]},"item_23_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Conference Paper","subitem_description_type":"Other"}]},"item_23_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"応用物理学会"}]},"item_23_relation_14":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://www.ssdm.jp/2020/index.html"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.ssdm.jp/2020/index.html","subitem_relation_type_select":"URI"}}]},"item_23_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"The copyright of this paper belongs to The Japan Society of Applied Physics. Copyright (c) 2020 The Japan Society of Applied Physics"}]},"item_23_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_23_text_37":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Kyushu Institute of Technology"},{"subitem_text_value":"Kyushu Institute of Technology"}]},"item_23_text_62":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"8516"}]},"item_23_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Gollapudi,  Srikanth"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Omura, Ichiro","creatorNameLang":"en"},{"creatorName":"大村, 一郎","creatorNameLang":"ja"},{"creatorName":"オオムラ, イチロウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-12-23"}],"displaytype":"detail","filename":"nperc156.pdf","filesize":[{"value":"1.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc156.pdf","url":"https://kyutech.repo.nii.ac.jp/record/6786/files/nperc156.pdf"},"version_id":"f2179150-28d1-4cf5-acaa-ea23857d19e8"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics ","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics "}]},"item_type_id":"23","owner":"3","path":["20"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-12-23"},"publish_date":"2020-12-23","publish_status":"0","recid":"6786","relation_version_is_last":true,"title":["Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics "],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T10:48:46.976904+00:00"}