{"created":"2023-05-15T12:00:06.140623+00:00","id":6787,"links":{},"metadata":{"_buckets":{"deposit":"06bd34ef-3b88-483a-9921-0b15d806bfe2"},"_deposit":{"created_by":3,"id":"6787","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"6787"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00006787","sets":["8:24"]},"author_link":["16176","28764"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-08-18","bibliographicIssueDateType":"Issued"},"bibliographic_titles":[{"bibliographic_title":"2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Increasing the rated voltage of IGBTs is indispensable for realizing future energy transmission systems such as gigawatt-class UHVDC and high-power motor drives with reduced number of series connection or simplified circuit topology. The voltage of IGBTs, however, has stagnated for 20 years at 6.5kV because of several issues. In this paper, we investigated the feasibility of a 13kV ultra-high voltage IGBT with twice the breakdown voltage of conventional IGBTs using TCAD simulations. As a result, the use of a double gate structure proved to be practical under DC bus voltage of 6.6 kV and a switching frequency of 150 Hz.","subitem_description_type":"Abstract"}]},"item_21_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020), 13-18 September, 2020, Vienna, Austria （新型コロナ感染拡大に伴い、現地開催中止）","subitem_description_type":"Other"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1109/ISPSD46842.2020.9170034","subitem_relation_type_select":"DOI"}}]},"item_21_relation_9":{"attribute_name":"ISBN","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"978-1-7281-4836-6","subitem_relation_type_select":"ISBN"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"978-1-7281-4837-3","subitem_relation_type_select":"ISBN"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2020 IEEE. Personal use of this material is permitted.  Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1946-0201","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"1063-6854","subitem_source_identifier_type":"ISSN"}]},"item_21_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Kyushu Institute of Technology"},{"subitem_text_value":"Kyushu Institute of Technology"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"8515"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ito,  Atsushi"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Omura, Ichiro","creatorNameLang":"en"},{"creatorName":"大村, 一郎","creatorNameLang":"ja"},{"creatorName":"オオムラ, イチロウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-12-23"}],"displaytype":"detail","filename":"nperc158.pdf","filesize":[{"value":"561.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc158.pdf","url":"https://kyutech.repo.nii.ac.jp/record/6787/files/nperc158.pdf"},"version_id":"8c153ae4-b7bc-42f3-b3de-ccdcce447426"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"13kV Si IGBT","subitem_subject_scheme":"Other"},{"subitem_subject":"UHV IGBT","subitem_subject_scheme":"Other"},{"subitem_subject":"Double gate","subitem_subject_scheme":"Other"},{"subitem_subject":"TCAD simulations","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"13kV UHV-IGBT: Feasibility Study","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"13kV UHV-IGBT: Feasibility Study"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-12-23"},"publish_date":"2020-12-23","publish_status":"0","recid":"6787","relation_version_is_last":true,"title":["13kV UHV-IGBT: Feasibility Study"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T10:48:51.033102+00:00"}