ログイン
Language:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

  1. 学位論文
  2. 学位論文

単層カーボンナノチューブアンジップにより得られたグラフェンナノリボンの誘電泳動法による配列と集積

https://doi.org/10.18997/00008030
https://doi.org/10.18997/00008030
8d2363cd-7d23-464f-a133-97e1c76208f9
名前 / ファイル ライセンス アクション
sei_k_387.pdf sei_k_387.pdf (3.4 MB)
アイテムタイプ 学位論文 = Thesis or Dissertation(1)
公開日 2021-02-24
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_db06
資源タイプ doctoral thesis
タイトル
タイトル Alignment and Assembly of Graphene Nanoribbons Obtained by Unzipping of Single-Walled Carbon Nanotubes by Dielectrophoresis Method
言語 en
タイトル
タイトル 単層カーボンナノチューブアンジップにより得られたグラフェンナノリボンの誘電泳動法による配列と集積
言語 ja
言語
言語 eng
著者 Wahyu Waskito Aji

× Wahyu Waskito Aji

en Wahyu Waskito Aji

Search repository
抄録
内容記述タイプ Abstract
内容記述 Nanoscale electrical devices are one of the biggest challenges for exceeding Moore's law owing to the limitations of fine processing technology in complementary metal-oxide-semiconductors (CMOS). Graphene is one of the most attractive materials due to high carrier mobility and conductivity, which becomes a candidate for replacing CMOS technology. Even though it has superior electrical properties, graphene is zero bandgaps, which means metallic behaving material at finite temparature. Bandgap opening to form semiconductive graphene was necessary for graphene devices application. Various reports suggested producing graphene with sub-10 nm width, called graphene nanoribbons (GNRs), to make the finite bandgap. Several reports showed that sub-10 nm GNRs could be obtained by lengthwise opening or cutting single-walled carbon nanotubes (SWNTs) sidewall or longitudinal unzipping. However, the application of GNR unzipped SWNTs is still limited because of the difficulty of separating the GNRs from excess SWNTs and the assembly process for device fabrication. One possible approach to select sGNRs from CNTs is the dielectrophoresis (DEP) method, which is the nanomaterial alignment method that avoids contamination. DEP is applied in the alignment of nanowires from metal to insulator and in separating materials of differing electrical properties such as metal and semiconductive CNTs (mCNTs and sCNTs, respectively). The separation capability is due to the different DEP forces generated from conductivities and permittivities of utilized materials. These merits indicate that DEP has excellent potential for solving both the separation problem between sGNRs and CNTs and the alignment problem between the electrodes by leveraging different materials' responses to the DEP force. In this thesis, I reported successfully assembled and separated sGNRs from excess SWNTs using the frequency-dependent dielectrophoresis (DEP) method by varying the frequency and applied voltage. The peaks from radial breathing mode (RBM) of the Raman spectrum were missing at frequencies higher than 13 MHz. The RBM peaks correlated with SWNTs, suggests that only sGNRs remained after the DEP. The AFM image and RBM Raman peaks also confirm successfully bridged single layer sGNRs by adjusting DEP condition. This result showed that the DEP method can be utilized for alignment and separation of sGNRs obtained from unzipped SWNTs, which is promising for nanocarbon device applications. The contents of this thesis are the following: Chapter 1 describes the introduction and literature review covering the theory and literature related to the involved works, research motivation, objectives, and study scope. The literature review includes the introduction of GNRs, fabrication of GNRS, and DEP. In chapter 2, I describe the materials, chemicals used, and experimental procedures. This chapter includes the experiment's design, the synthesis process of GNRs by longitudinal unzipping, and DEP's experimental set-up. The characterization technique and working principle. Chapter 3 describes the alignment and assembly of SWNTs/GNRs with the influence of applied voltage, frequency, and gap size of the electrode. The AFM images and presence of D and G band peak in the Raman spectrum confirmed sGNRs with excess SWNTs were successfully bridged by the DEP method. The increase in applied voltage will increase the number of trapped SWNTs/GNRs. The opposite effect was observed in the frequency-dependent DEP, which means that the increase in applied frequency decreased the number of trapped SWNTs/GNRs. In chapter 4, I describe the separation between sGNRs and mSWNTs with frequency DEP. The metallic SWNTs peaks from radial breathing mode (RBM) were missing at frequencies higher than 13 MHz. The disappear of RBM peak suggests that only sGNRs remained after the DEP. The attractive DEP force of the sGNRs becomes stronger than that of SWNTs under these conditions. This finding was supported by the structural evaluation of bridged SWNTs/sGNRs and the DEP process's theoretical calculations. In chapter 5, I describe the bridging of single layer sGNRs. By the AFM images and RBM peak, we confirmed the presence of single layer sGNRs trapped via 1 Vpp, 15 MHz, 2μm gap size, and diluted SWNTs/GNRs in 1:50 ratio as DEP condition. In chapter 6, I conclude that sGNRs are successfully assembled and separated from excess SWNTs via the DEP method.
目次
内容記述タイプ TableOfContents
内容記述 1 Introduction and Literature Review||2 Methodology||3 Alignment and Assembly of Graphene Nanoribbons Unzipped Single-Walled Carbon Nanotubes by Dielectrophoresis Method||4 Frequency Dependence Dielectrophoresis Technique for Graphene Nanoribbons Separations||5 Single Trapping Graphene Nanoribbons Unzipped Single-Walled Carbon Nanotubes by Dielectrophoresis||6 Conclusions and Suggestions
備考
内容記述タイプ Other
内容記述 九州工業大学博士学位論文 学位記番号:生工博甲第387号 学位授与年月日:令和2年12月28日
キーワード
主題Scheme Other
主題 graphene nanoribbons
キーワード
主題Scheme Other
主題 Dielectrophoresis
キーワード
主題Scheme Other
主題 Longitudinal Unzipping
キーワード
主題Scheme Other
主題 alignment
キーワード
主題Scheme Other
主題 separation
アドバイザー
田中, 啓文
学位授与番号
学位授与番号 甲第387号
学位名
学位名 博士(工学)
学位授与年月日
学位授与年月日 2020-12-28
学位授与機関
学位授与機関識別子Scheme kakenhi
学位授与機関識別子 17104
学位授与機関名 九州工業大学
学位授与年度
内容記述タイプ Other
内容記述 令和2年度
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
ID登録
ID登録 10.18997/00008030
ID登録タイプ JaLC
戻る
0
views
See details
Views

Versions

Ver.1 2023-05-15 12:55:48.890777
Show All versions

Share

Share
tweet

Cite as

Other

print

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR 2.0
  • OAI-PMH JPCOAR 1.0
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX
  • ZIP

コミュニティ

確認

確認

確認


Powered by WEKO3


Powered by WEKO3