@article{oai:kyutech.repo.nii.ac.jp:00007131,
 author = {Deka,  Angshuman and Rana,  Bivas and Anami,  Ryo and Miura,  Katsuya and Takahashi,  Hiromasa and Otani,  YoshiChika and Fukuma, Yasuhiro and 福間, 康裕},
 issue = {17},
 journal = {Physical review B},
 month = {May},
 note = {Magnetoelectric coupling in metal/oxide heterostructures has opened up the possibility of controlling magnetization by voltage, i.e., electric field. However, the electric-field excitation of magnetization dynamics in perfectly in-plane and out-of-plane magnetized films have not been demonstrated so far due to zero electric-field torque originating from voltage control of perpendicular magnetic anisotropy. This limits the application of voltage-controlled magnetic anisotropy in magnetic field free control of magnetization dynamics. Here we show that magnetic annealing can induce an interfacial in-plane magnetic anisotropy of CoFeB/MgO junctions, thereby controlling the symmetry of interfacial magnetic anisotropy. The magnetic anisotropy is modulated by applying voltage: a negative bias voltage increases perpendicular magnetic anisotropy, while a positive bias voltage decreases perpendicular magnetic anisotropy and increases the in-plane magnetic anisotropy. Such a control of symmetry of the interfacial magnetic anisotropy by magnetic annealing and its tunability by electric fields is useful for developing purely voltage-controlled spintronic devices.},
 title = {Electric-field control of interfacial in-plane magnetic anisotropy in CoFeB/MgO junctions},
 volume = {101},
 year = {2020},
 yomi = {フクマ, ヤスヒロ}
}