@article{oai:kyutech.repo.nii.ac.jp:00007195,
 author = {Kawauchi,  Yuma and Akimoto,  Kenji and Watanabe, Akihiko and 渡邉, 晃彦 and Omura, Ichiro and 大村, 一郎},
 journal = {2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
 month = {Jun},
 note = {We demonstrated power cycling tests with different temperature coefficient samples and shown that cycles to failure strongly depends upon the coefficient. The test samples are investigated by SAT before and after the failure. As a result, we clarified the relationship between the DUT temperature coefficient and failure mechanism. The temperature coefficient is extremely important as a parameter for power cycle tests. High temperature coefficient can lead shorter cycles to failure by thermal runaway before bonding wire disconnection. We also proposed a new method to control temperature coefficient of DUT with gate voltage clamping to drain voltage., 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2021), 30th of May and 3rd of June, 2021, Full Virtual Conference},
 pages = {171--174},
 title = {DUT Temperature Coefficient and Power Cycles to Failure},
 year = {2021},
 yomi = {ワタナベ, アキヒコ and オオムラ, イチロウ}
}