@article{oai:kyutech.repo.nii.ac.jp:00007204,
 author = {Nakamura,  R. and Matsumoto,  A. and Ishimaru, Manabu and 石丸, 学},
 issue = {21},
 journal = {Journal of Applied Physics},
 month = {Jun},
 note = {The crystallization of sputter-deposited substrate-free films of amorphous germanium was induced by electron irradiation at SEM-level energies of less than 20 keV at ambient temperature using an electron probe microanalyzer. Instantaneous crystallization, referred to as explosive crystallization, occurred consistently at 2–20 keV; the threshold of electron fluxes is 1015–1016 m−2 s−1, which is five to six orders of magnitude lower than those at 100 keV reported previously. This process is expected to be advantageous in the production of polycrystalline Ge films since it is rapid, requires little energy, and results in negligible damage to the substrate.},
 title = {Explosive crystallization of sputter-deposited amorphous germanium films by irradiation with an electron beam of SEM-level energies},
 volume = {129},
 year = {2021},
 yomi = {イシマル, マナブ}
}