{"created":"2023-05-15T12:00:24.672414+00:00","id":7204,"links":{},"metadata":{"_buckets":{"deposit":"20ac26de-f6b9-47e6-9a2d-1b88cf49f7b3"},"_deposit":{"created_by":3,"id":"7204","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"7204"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00007204","sets":["8:9"]},"author_link":["31031","31032","25703"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-06-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"21","bibliographicPageStart":"215301","bibliographicVolumeNumber":"129","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The crystallization of sputter-deposited substrate-free films of amorphous germanium was induced by electron irradiation at SEM-level energies of less than 20 keV at ambient temperature using an electron probe microanalyzer. Instantaneous crystallization, referred to as explosive crystallization, occurred consistently at 2–20 keV; the threshold of electron fluxes is 1015–1016 m−2 s−1, which is five to six orders of magnitude lower than those at 100 keV reported previously. This process is expected to be advantageous in the production of polycrystalline Ge films since it is rapid, requires little energy, and results in negligible damage to the substrate.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_link_62":{"attribute_name":"研究者情報","attribute_value_mlt":[{"subitem_link_url":"https://hyokadb02.jimu.kyutech.ac.jp/html/100000642_ja.html"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/5.0052142","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics and may be found at https://aip.scitation.org/doi/10.1063/5.0052142."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"1089-7550","subitem_source_identifier_type":"ISSN"}]},"item_21_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"420","subitem_subject_scheme":"NDC"}]},"item_21_text_28":{"attribute_name":"論文ID（連携）","attribute_value_mlt":[{"subitem_text_value":"10367530"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Osaka Prefecture University"},{"subitem_text_value":"Osaka Prefecture University"},{"subitem_text_value":"Kyushu Institute of Technology"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"9025"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nakamura,  R."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Matsumoto,  A."}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Ishimaru, Manabu","creatorNameLang":"en"},{"creatorName":"石丸, 学","creatorNameLang":"ja"},{"creatorName":"イシマル, マナブ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-07-27"}],"displaytype":"detail","filename":"JAP21-AR-01739.pdf","filesize":[{"value":"2.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JAP21-AR-01739.pdf","url":"https://kyutech.repo.nii.ac.jp/record/7204/files/JAP21-AR-01739.pdf"},"version_id":"ba59da4d-ea31-4a82-b7cc-043d71f9ee59"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Explosive crystallization of sputter-deposited amorphous germanium films by irradiation with an electron beam of SEM-level energies","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Explosive crystallization of sputter-deposited amorphous germanium films by irradiation with an electron beam of SEM-level energies"}]},"item_type_id":"21","owner":"3","path":["9"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-07-27"},"publish_date":"2021-07-27","publish_status":"0","recid":"7204","relation_version_is_last":true,"title":["Explosive crystallization of sputter-deposited amorphous germanium films by irradiation with an electron beam of SEM-level energies"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2024-04-02T08:41:10.612653+00:00"}