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基板研磨および洗浄プロセスにおける水溶性フラーレン誘導体に関する研究
https://doi.org/10.18997/00008587
https://doi.org/10.18997/00008587ce470fdd-38f4-4328-8b45-25d972e4326d
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
jou_k_361 (70.5 MB)
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| アイテムタイプ | 学位論文 = Thesis or Dissertation(1) | |||||||||
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| 公開日 | 2021-11-29 | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_db06 | |||||||||
| 資源タイプ | doctoral thesis | |||||||||
| タイトル | ||||||||||
| タイトル | Study on Water-soluble Fullerene Derivatives in Substrate Chemical Mechanical Polishing and Cleaning Process | |||||||||
| 言語 | en | |||||||||
| タイトル | ||||||||||
| タイトル | 基板研磨および洗浄プロセスにおける水溶性フラーレン誘導体に関する研究 | |||||||||
| 言語 | ja | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 著者 |
蔡, 岳勲
× 蔡, 岳勲
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| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | Silicon carbide （SiC） is the most appropriate semiconductor material for power devices, electric vehicles, and 5G technology due to its high bandgap, high electric breakdown field, and high thermal conductivity. However, it is hard to be processed because of the high hardness and chemical inertness. SiC usually takes a long time and consumables in the planarization of chemical mechanical polishing （CMP） process by conventional SiO2 abrasive slurry. Besides, the scratches easily appear on polished SiC surfaces while using diamond powder as the abrasive of slurry though diamond slurry approaches a high removal rate. Therefore, this thesis aims to develop novel and auxiliary abrasives for colloidal SiO2 based slurry of SiC CMP. Two types of water-soluble fullerene（C60）-derivatives, cyclodextrin inclusion complex （C60/cyclodextrins, C60/CDs） and polyhydroxylated fullerene/fullerenol （C60（OH）n）, are added with SiO2-based slurry, respectively. Two types of hybrid abrasive slurries behaved significantly in the increase of material removal rate （MRR）. By the nanoindentation test, relatively low surface hardness was measured while Berkovich tip （diamond indenter） pressed the C60/ β -CDs adsorption layer and penetrated the SiC substrate. Based on it, a removal mechanism of the C60-derivative hybrid abrasive was proposed in the article. For cost reduction and eco-friendliness, extending the usable period of hybrid abrasive is necessary. To inspect the degrading rate of the hybrid abrasive slurry, a polishing mode, named batch-reused slurry （BRS）, is implemented to record the performance of reused slurry over cycles. The result of C60/ β -CDs and SiO2 hybrid abrasive indicated the increases of MRR by 8~28% compared to mere SiO2 abrasive. Still, the whole MRR with reused slurry descended since C60/ β-CDs abrasive clogged in the slits of pad asperities. On the other hand, C60（OH）12/DMSO hybrid SiO2 hybrid abrasive showed more significant increases of MRR by ca. 90% in 5 cycles and less clogging happened since C60（OH）12/DMSO has the smaller and more uniform particle size than C60/ β-CDs inclusion complex. In addition, the primary abrasive, SiO2, plays an important role. For example, 20 nm SiO2 abrasive has no descending MRR over cycles, but the whole MRR appeared lower than 55 nm SiO2 abrasive since it is according to particle numbers. As to the finished quality of SiC surface, C60/ β -CDs hybrid abrasive seemed to eliminate mechanical abrasion marks and reduces surface roughness （by AFM）; whereas, C60（OH）12/DMSO hybrid abrasive enhanced the abrasion marks instead since the high affinity of adhesion to SiO2 abrasive, and high polishing efficiency. In the last part, an alkaline C60（OH）12 was applied to clean the Cu interconnection process to remove the residual inhibitor, benzotriazole （BTA）, from the copper blanket wafer. The contact angle and XPS results showed no residual BTA remained on the copper surface after ultrasonically immersing with the 0.05wt% KOH-C60（OH）12 solution. In contrast, there were still residual indications cleaned by just the same concentration of KOH solution. The result indicated that C60（OH）12 has the abrasion behavior on hard-brittle material as solid abrasive and removing reaction of the copper-BTA complex layer as a chemical scavenger under the aid of KOH and ultrasonication. Eventually, the above results of SiC CMP have revealed that there is improvement needed to optimize between the selection of abrasive, polishing pad, particle concentration, and even pH value of slurry in future works. | |||||||||
| 目次 | ||||||||||
| 内容記述タイプ | TableOfContents | |||||||||
| 内容記述 | 1. Introduction||2. Overview||3. C60/cyclodextrins Slurry for Sic Substrate CMP||4. Performance of C60/Β-cyclodextrins and C60（OH）12 Slurry Used in Continuous CMP||5. Alkaline Fullerenol Cleaning Solution for Cooper Metallization Process||6. Conclusions | |||||||||
| 備考 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | 九州工業大学博士学位論文 学位記番号：情工博甲第361号 学位授与年月日：令和3年9月24日 | |||||||||
| キーワード | ||||||||||
| 主題Scheme | Other | |||||||||
| 主題 | Silicon carbide substrate | |||||||||
| キーワード | ||||||||||
| 主題Scheme | Other | |||||||||
| 主題 | chemical mechanical polishing | |||||||||
| キーワード | ||||||||||
| 主題Scheme | Other | |||||||||
| 主題 | wafer cleaning process | |||||||||
| キーワード | ||||||||||
| 主題Scheme | Other | |||||||||
| 主題 | water-soluble fullerene derivatives | |||||||||
| キーワード | ||||||||||
| 主題Scheme | Other | |||||||||
| 主題 | cyclodextrin inclusion complex | |||||||||
| キーワード | ||||||||||
| 主題Scheme | Other | |||||||||
| 主題 | fullerenol | |||||||||
| アドバイザー | ||||||||||
| 鈴木, 恵友 | ||||||||||
| 学位授与番号 | ||||||||||
| 学位授与番号 | 甲第361号 | |||||||||
| 学位名 | ||||||||||
| 学位名 | 博士（情報工学） | |||||||||
| 学位授与年月日 | ||||||||||
| 学位授与年月日 | 2021-09-24 | |||||||||
| 学位授与機関 | ||||||||||
| 学位授与機関識別子Scheme | kakenhi | |||||||||
| 学位授与機関識別子 | 17104 | |||||||||
| 学位授与機関名 | 九州工業大学 | |||||||||
| 学位授与年度 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | 令和3年度 | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| アクセス権 | ||||||||||
| アクセス権 | open access | |||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||
| ID登録 | ||||||||||
| ID登録 | 10.18997/00008587 | |||||||||
| ID登録タイプ | JaLC | |||||||||
