WEKO3
アイテム
Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations
http://hdl.handle.net/10228/00008713
http://hdl.handle.net/10228/00008713ed237595-5354-49be-9c6a-bc70ab8cb32e
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
nperc139.pdf (914.5 kB)
|
|
| Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2022-02-07 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 著者 |
Torimi, Satoshi
× Torimi, Satoshi× Obiyama, Yoshiki× Tsukuda, Masanori× 大村, 一郎
WEKO
16176
|
|||||||||||||
| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | We propose a calculation model of current density that causes forward bias degradation from substrate basal plane dislocations (BPDs) in 4H-SiC PiN diodes. The hole concentration above which substrate BPDs expand to single Shockley stacking faults (1SSFs) at the buffer/substrate interface was experimentally evaluated from forward-current stress tests of 4H-SiC PiN diodes by comparison with our model results, resulting in 8.0 × 1015 cm-3. We confirmed the dependence of the current density on the dopant concentration and the hole lifetime in the buffer layer numerically. The model was extended to the case where BPD converted to threading edge dislocations (TEDs) in the substrate, and the relational expression between the depth of the BPD-TED conversion position in the substrate and the current density at which BPD expanded to 1SSF was obtained. The model suggested that it will be an effective technique for suppressing forward bias degradation by shorter lifetime and deeper BPD-TED conversion position in the substrate. | |||||||||||||
| 言語 | en | |||||||||||||
| 書誌情報 |
en : Solid-State Electronics 巻 166, p. 107770-1-107770-7, 発行日 2020-02-05 |
|||||||||||||
| 出版社 | ||||||||||||||
| 出版者 | Elsevier | |||||||||||||
| DOI | ||||||||||||||
| 関連タイプ | isVersionOf | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | https://doi.org/10.1016/j.sse.2020.107770 | |||||||||||||
| 日本十進分類法 | ||||||||||||||
| 主題Scheme | NDC | |||||||||||||
| 主題 | 549 | |||||||||||||
| NCID | ||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||
| 収録物識別子 | AA0084461X | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | PISSN | |||||||||||||
| 収録物識別子 | 0038-1101 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | EISSN | |||||||||||||
| 収録物識別子 | 1879-2405 | |||||||||||||
| 著作権関連情報 | ||||||||||||||
| 権利情報 | Copyright (c) 2020 Elsevier Ltd. All rights reserved. | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | 4H-SiC | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | PiN diode | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Forward bias degradation | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Carrier lifetime | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | BPD-TED conversion position | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | AM | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||
| 査読の有無 | ||||||||||||||
| 値 | yes | |||||||||||||
| 連携ID | ||||||||||||||
| 値 | 8167 | |||||||||||||
