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炭素ベースの全無機ペロブスカイト太陽電池の界面エンジニアリング
https://doi.org/10.18997/00008915
https://doi.org/10.18997/000089150f71d25d-55b3-448b-9055-baf6cc19b672
| 名前 / ファイル | ライセンス | アクション |
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sei_k_429.pdf (4.6 MB)
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| Item type | 学位論文 = Thesis or Dissertation(1) | |||||||
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| 公開日 | 2022-06-15 | |||||||
| 資源タイプ | ||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_db06 | |||||||
| 資源タイプ | doctoral thesis | |||||||
| タイトル | ||||||||
| タイトル | Interfacial Engineering for Carbon-Based All-Inorganic Perovskite Solar Cells | |||||||
| 言語 | en | |||||||
| タイトル | ||||||||
| タイトル | 炭素ベースの全無機ペロブスカイト太陽電池の界面エンジニアリング | |||||||
| 言語 | ja | |||||||
| 言語 | ||||||||
| 言語 | eng | |||||||
| 著者 |
Han, Qianji
× Han, Qianji
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| 抄録 | ||||||||
| 内容記述タイプ | Abstract | |||||||
| 内容記述 | Recently, perovskite solar cells （PSCs） have attracted great attention because of their facile fabrication and excellent photovoltaic performance. So far, the power conversion efficiency （PCE） of PSCs has rapidly increased from 3.8 % to 25.5 %. All-inorganic perovskite materials, typically CsPbI2Br, have received widespread attention due to their illustrious thermal stability and appropriate bandgap. Furthermore, carbon-based CsPbI2Br perovskite solar cells not only further improve the thermal and moisture stability of the devices but also reduce production costs and simplify procedure processes. However, the inevitable defects of the perovskite layer, energy level mismatch between perovskite and carbon electrodes, and the phase instability of CsPbI2Br limit the enhancement of PCE and stability for carbon-based CsPbI2Br PSCs. This thesis focuses on improving the performance and stability of carbon-based all-inorganic PSCs through the interface modification method. Firstly, we used the N-phenylthiourea （PTU） and N-phenylurea （PU） with S or O elements and phenyl rings as modifiers of perovskite layers. The results show that either PTU or PU can promote the crystallinity of the perovskite film and effectively suppress the recombination of charge carriers. Secondly, we applied a small molecule material, delta-2:2-bis（1,3-dithiazole）, to modify the interface between perovskite and carbon electrode. We found that the sulfur atom of the target molecule （TM） can effectively interact with the Pb ion of perovskite, which can decrease the trap density of perovskite films and suppress the recombination. Thirdly, we introduced a double perovskite material, Cs2PtI6, to do the passivation of CsPbI2Br perovskite. We found that the fabricated device performance is improved, because the Cs2PtI6 can adjust the energy levels between the interfaces of the CsPbI2Br/carbon electrode and fill in the defects of perovskite surfaces and grain boundaries. As a result, the champion PCE of 13.69% was achieved after Cs2PtI6 introduction, the stability of the device was significantly improved under several conditions. In chapter 1, the progress and types of photovoltaic technology and the current development of the perovskite solar cells were introduced. In addition, the perovskite materials, the structure, and the working principle of the device also have been described. Moreover, the classification of perovskite solar cells and the advantages and disadvantages of all-inorganic perovskite solar cells were also introduced. Finally, the current issues of the carbon-based all inorganic perovskite solar cells and the purpose of this thesis were depicted. In chapter 2, the used reagents and apparatus in this thesis were listed. In addition, basic principles and techniques were described, such as XRD, FE-SEM, XPS, UV-Vis, UPS, SCLC, PL, and TRPL. Meanwhile, the information about the related equipment were also given. In chapter 3, for enhancing the performance and energy level match of the carbon-based all-inorganic PSCs. The N-phenylthiourea （PTU） with S atom and N-phenylurea （PU） with O atom were applied for interface modification materials in C-PSCs. The atoms S and O can combine with Pb and enhance perovskite crystallinity as well as manage the energy level. Meanwhile, after the passivation of PTU and PU, the defect state density of the perovskite layer is significantly reduced, thereby inhibiting the recombination of carriers. The Voc of the device with PTU increases from 1.12 V to 1.22V, 9% improvement over the control device. The efficiency of CsPbI2Br C-PSCs is improved from 10.29% to 13.01% after modification. Furthermore, the stability of the device has been improved. In chapter 4, for improved the performance of the devices, a sulfur-rich small molecule material （delta-2:2-bis （1,3-dithiazole））, was used to modify the interface between CsPbI2Br and carbon electrode. Encouragingly, the carbon-based CsPbI2Br PSCs achieve a high PCE of 13.78 % than the control of 10.40 %. The remarkable reduction of defect density and suppression recombination should be responsible for the PCE improvement. In chapter 5, for increased the PCE and stability of carbon-based CsPbI2Br PSCs. We demonstrate a simple and effective strategy for regulating energy level, inhibiting carrier recombination, and delaying the degradation of perovskite by modifying the surface of CsPbI2Br with a new type of 2D perovskite Cs2PtI6. The carbon-based CsPbI2Br PSCs achieve a higher PCE （13.69 %） than the control device （11.10 %）. The excellent matching of the energy level and suppression of charge carrier recombination should be responsible for the improvement of efficiency. Furthermore, the excellent hydrophobic performance of Cs2PtI6 enhances the moisture resistance of the device. Finally, the general conclusions of this thesis and the further prospects were summarized. In addition to efficiency, long-term stability and production cost still are issues that need to be overcome in the commercialization process of the PSCs. It is also the object that we will focus on in the future. | |||||||
| 言語 | en | |||||||
| 目次 | ||||||||
| 内容記述タイプ | TableOfContents | |||||||
| 内容記述 | 1. Introduction||2. Experimental section of the general methods and characterization techniques||3. Reducing the energy loss by interface passivation via small molecule||4. Enhancing performance by sulfur-rich molecule interface engineering||5. Improving moisture stability via Cs2PtI6||6. General conclusions and future prospects | |||||||
| 備考 | ||||||||
| 内容記述タイプ | Other | |||||||
| 内容記述 | 九州工業大学博士学位論文 学位記番号: 生工博甲第429号 学位授与年月日: 令和4年3月25日 | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Inorganic perovskite solar cells | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Interface engineering | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Carbon electrode | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Double perovskites | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | CsPbI2Br | |||||||
| アドバイザー | ||||||||
| 馬, 廷麗 | ||||||||
| 学位授与番号 | ||||||||
| 学位授与番号 | 甲第429号 | |||||||
| 学位名 | ||||||||
| 学位名 | 博士（工学） | |||||||
| 学位授与年月日 | ||||||||
| 学位授与年月日 | 2022-03-25 | |||||||
| 学位授与機関 | ||||||||
| 学位授与機関識別子Scheme | kakenhi | |||||||
| 学位授与機関識別子 | 17104 | |||||||
| 学位授与機関名 | 九州工業大学 | |||||||
| 学位授与年度 | ||||||||
| 内容記述タイプ | Other | |||||||
| 内容記述 | 令和3年度 | |||||||
| 出版タイプ | ||||||||
| 出版タイプ | VoR | |||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||
| アクセス権 | ||||||||
| アクセス権 | open access | |||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||
| ID登録 | ||||||||
| ID登録 | 10.18997/00008915 | |||||||
| ID登録タイプ | JaLC | |||||||
