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Hybrid GaN-SiC Power Switches for Optimum Switching, Conduction and Free-Wheeling Performance
http://hdl.handle.net/10228/00009029
http://hdl.handle.net/10228/0000902904c41c14-cc6b-4b88-adab-edb563816b13
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
nperc207.pdf (740.0 kB)
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| Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||||
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| 公開日 | 2022-12-09 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Hybrid GaN-SiC Power Switches for Optimum Switching, Conduction and Free-Wheeling Performance | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 著者 |
Battuvshin Bayarkhuu,
× Battuvshin Bayarkhuu,× Nath Tripathi, Ravi× 大村, 一郎
WEKO
16176
× Castellazzi, Alberto |
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | In the wide bandgap (WBG) arena, it is generally considered that GaN and SiC are competitors for the 600 V voltage class. However, in reality, they possess partly highly complementary functional characteristics, which, when duly combined, can yield advanced performance in power conversion applications. Here, the focus is specifically on the development of a hybrid GaN-SiC power switch to demonstrate superiority over either a GaN-only or SiC-only transistor. It is an original undertaking, whose outcomes will be directly applicable to several application domains. | |||||||||||||
| 言語 | en | |||||||||||||
| 備考 | ||||||||||||||
| 内容記述タイプ | Other | |||||||||||||
| 内容記述 | IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2022), 22-25 May 2022, Vancouver, Canada | |||||||||||||
| 書誌情報 |
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) p. 301-304, 発行日 2022-07-06 |
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| 出版社 | ||||||||||||||
| 出版者 | IEEE | |||||||||||||
| DOI | ||||||||||||||
| 関連タイプ | isVersionOf | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | https://doi.org/10.1109/ISPSD49238.2022.9813667 | |||||||||||||
| ISBN | ||||||||||||||
| 識別子タイプ | ISBN | |||||||||||||
| 関連識別子 | 978-1-6654-2201-7 | |||||||||||||
| 日本十進分類法 | ||||||||||||||
| 主題Scheme | NDC | |||||||||||||
| 主題 | 549 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | EISSN | |||||||||||||
| 収録物識別子 | 1946-0201 | |||||||||||||
| 著作権関連情報 | ||||||||||||||
| 権利情報 | Copyright (c) 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Hybrid GaN-SiC | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Wide bandgap devices | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | SiC MOSFET | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | GaN HEMT | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | AM | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||
| 査読の有無 | ||||||||||||||
| 値 | yes | |||||||||||||
| 連携ID | ||||||||||||||
| 値 | 10991 | |||||||||||||
