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Dynamic Vgs-Id monitoring system for junction temperature estimation for MOS gate power semiconductors
http://hdl.handle.net/10228/00009031
http://hdl.handle.net/10228/00009031a37e8957-defc-420f-8860-6472c32e2828
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||||
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公開日 | 2022-12-12 | |||||||||||||
資源タイプ | ||||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
資源タイプ | journal article | |||||||||||||
タイトル | ||||||||||||||
タイトル | Dynamic Vgs-Id monitoring system for junction temperature estimation for MOS gate power semiconductors | |||||||||||||
言語 | ||||||||||||||
言語 | eng | |||||||||||||
著者 |
Bayarsaikhan, Yandagkhuu
× Bayarsaikhan, Yandagkhuu× 大村, 一郎
WEKO
16176
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抄録 | ||||||||||||||
内容記述タイプ | Abstract | |||||||||||||
内容記述 | Condition monitoring of power devices during operation is gaining importance as demand for high-reliability increases. The junction temperature of a power semiconductor device is a critical indicator of reliability. Therefore, we developed a new method for estimating the junction temperature of Si MOSFET based on the dynamic threshold voltage. The proposed method uses a tiny PCB sensor for detecting source current and capturing dynamic gate-source voltage at different current levels. The measurement circuit was successfully developed and evaluated by a double pulse test. The measured output voltage was digitized by 16-bit ADC included in the microcontroller to achieve the complete monitoring system. The temperature sensitivity of the Si MOSFET was -2.2 mV/°C and it was independent of the high side device temperature. | |||||||||||||
備考 | ||||||||||||||
内容記述タイプ | Other | |||||||||||||
内容記述 | IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2022), 22-25 May 2022, Vancouver, Canada | |||||||||||||
書誌情報 |
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) p. 193-196, 発行日 2022-07-06 |
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出版社 | ||||||||||||||
出版者 | IEEE | |||||||||||||
DOI | ||||||||||||||
関連タイプ | isVersionOf | |||||||||||||
識別子タイプ | DOI | |||||||||||||
関連識別子 | https://doi.org/10.1109/ISPSD49238.2022.9813601 | |||||||||||||
ISBN | ||||||||||||||
識別子タイプ | ISBN | |||||||||||||
関連識別子 | 978-1-6654-2201-7 | |||||||||||||
ISBN | ||||||||||||||
識別子タイプ | ISBN | |||||||||||||
関連識別子 | 978-1-6654-2200-0 | |||||||||||||
ISBN | ||||||||||||||
識別子タイプ | ISBN | |||||||||||||
関連識別子 | 978-1-6654-2202-4 | |||||||||||||
日本十進分類法 | ||||||||||||||
主題Scheme | NDC | |||||||||||||
主題 | 549 | |||||||||||||
ISSN | ||||||||||||||
収録物識別子タイプ | ISSN | |||||||||||||
収録物識別子 | 1946-0201 | |||||||||||||
ISSN | ||||||||||||||
収録物識別子タイプ | ISSN | |||||||||||||
収録物識別子 | 1063-6854 | |||||||||||||
著作権関連情報 | ||||||||||||||
権利情報 | Copyright (c) 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||||||||||
キーワード | ||||||||||||||
主題Scheme | Other | |||||||||||||
主題 | MOSFET | |||||||||||||
キーワード | ||||||||||||||
主題Scheme | Other | |||||||||||||
主題 | Temperature measurement | |||||||||||||
キーワード | ||||||||||||||
主題Scheme | Other | |||||||||||||
主題 | Temperature monitoring | |||||||||||||
キーワード | ||||||||||||||
主題Scheme | Other | |||||||||||||
主題 | Threshold voltage | |||||||||||||
キーワード | ||||||||||||||
主題Scheme | Other | |||||||||||||
主題 | Rogowski coil | |||||||||||||
キーワード | ||||||||||||||
主題Scheme | Other | |||||||||||||
主題 | PCB current sensor | |||||||||||||
キーワード | ||||||||||||||
主題Scheme | Other | |||||||||||||
主題 | Condition monitoring | |||||||||||||
出版タイプ | ||||||||||||||
出版タイプ | AM | |||||||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||
査読の有無 | ||||||||||||||
値 | yes | |||||||||||||
連携ID | ||||||||||||||
10992 |