{"created":"2023-05-15T12:00:51.233623+00:00","id":7828,"links":{},"metadata":{"_buckets":{"deposit":"9a63cfce-86da-476f-afd0-68c088ac6b42"},"_deposit":{"created_by":3,"id":"7828","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"7828"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00007828","sets":["8:24"]},"author_link":["16176","34264"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2022-07-06","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"196","bibliographicPageStart":"193","bibliographic_titles":[{"bibliographic_title":"2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Condition monitoring of power devices during operation is gaining importance as demand for high-reliability increases. The junction temperature of a power semiconductor device is a critical indicator of reliability. Therefore, we developed a new method for estimating the junction temperature of Si MOSFET based on the dynamic threshold voltage. The proposed method uses a tiny PCB sensor for detecting source current and capturing dynamic gate-source voltage at different current levels. The measurement circuit was successfully developed and evaluated by a double pulse test. The measured output voltage was digitized by 16-bit ADC included in the microcontroller to achieve the complete monitoring system. The temperature sensitivity of the Si MOSFET was -2.2 mV/°C and it was independent of the high side device temperature.","subitem_description_type":"Abstract"}]},"item_21_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2022), 22-25 May 2022, Vancouver, Canada","subitem_description_type":"Other"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1109/ISPSD49238.2022.9813601","subitem_relation_type_select":"DOI"}}]},"item_21_relation_9":{"attribute_name":"ISBN","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"978-1-6654-2201-7","subitem_relation_type_select":"ISBN"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"978-1-6654-2200-0","subitem_relation_type_select":"ISBN"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"978-1-6654-2202-4","subitem_relation_type_select":"ISBN"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1946-0201","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"1063-6854","subitem_source_identifier_type":"ISSN"}]},"item_21_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Kyushu Institute of Technology"},{"subitem_text_value":"Kyushu Institute of Technology"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"10992"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Bayarsaikhan,  Yandagkhuu"}],"nameIdentifiers":[{"nameIdentifier":"34264","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Omura, Ichiro","creatorNameLang":"en"},{"creatorName":"大村, 一郎","creatorNameLang":"ja"},{"creatorName":"オオムラ, イチロウ","creatorNameLang":"ja-Kana"}],"familyNames":[{"familyName":"Omura","familyNameLang":"en"},{"familyName":"大村","familyNameLang":"ja"},{"familyName":"オオムラ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Ichiro","givenNameLang":"en"},{"givenName":"一郎","givenNameLang":"ja"},{"givenName":"イチロウ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"16176","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"10510670","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000010510670"},{"nameIdentifier":"7003814580","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=7003814580"},{"nameIdentifier":"69","nameIdentifierScheme":"九工大研究者情報","nameIdentifierURI":"https://hyokadb02.jimu.kyutech.ac.jp/html/69_ja.html"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-12-12"}],"displaytype":"detail","filename":"nperc208.pdf","filesize":[{"value":"1.8 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc208.pdf","url":"https://kyutech.repo.nii.ac.jp/record/7828/files/nperc208.pdf"},"version_id":"85bb55c1-1958-4cf3-b95c-c5919e890315"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"MOSFET","subitem_subject_scheme":"Other"},{"subitem_subject":"Temperature measurement","subitem_subject_scheme":"Other"},{"subitem_subject":"Temperature monitoring","subitem_subject_scheme":"Other"},{"subitem_subject":"Threshold voltage","subitem_subject_scheme":"Other"},{"subitem_subject":"Rogowski coil","subitem_subject_scheme":"Other"},{"subitem_subject":"PCB current sensor","subitem_subject_scheme":"Other"},{"subitem_subject":"Condition monitoring","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Dynamic Vgs-Id monitoring system for junction temperature estimation for MOS gate power semiconductors","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Dynamic Vgs-Id monitoring system for junction temperature estimation for MOS gate power semiconductors"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-12-12"},"publish_date":"2022-12-12","publish_status":"0","recid":"7828","relation_version_is_last":true,"title":["Dynamic Vgs-Id monitoring system for junction temperature estimation for MOS gate power semiconductors"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T10:48:54.957754+00:00"}