@article{oai:kyutech.repo.nii.ac.jp:00007941,
 author = {Bayarsaikhan, Yandagkhuu and Omura, Ichiro and 大村, 一郎},
 issue = {343},
 journal = {電子情報通信学会技術研究報告. EE, 電子通信エネルギー技術},
 month = {Jan},
 note = {As the demand for high reliability in power electronics systems increases, the online condition monitoring of power devices is becoming crucial. The junction temperature is a vital indicator of the reliability and health of the power semiconductor devices. Therefore, we developed a novel junction temperature measurement method via dynamic threshold voltage. The proposed method uses a specially designed PCB sensor for detecting a drain current and captures the dynamic gate-source voltage at predetermined drain current levels. The analog circuit was designed and experimentally verified by a double pulse test. A 16-bit ADC embedded in the microcontroller is utilized to digitize the captured voltage to demonstrate the monitoring system. The temperature sensitivity of the Power MOSFET was -2.2 mV/°C and was unaffected by the high side device temperature., 電子通信エネルギー技術研究会（EE）, 2023年1月19日 - 20日, 九州工業大学},
 pages = {111--116},
 title = {Online junction temperature measurement of Power MOSFET by dynamic VGS-ID monitoring system},
 volume = {122},
 year = {2023},
 yomi = {オオムラ, イチロウ}
}