{"created":"2023-05-15T12:00:56.129846+00:00","id":7941,"links":{},"metadata":{"_buckets":{"deposit":"bcfbdbc3-44cd-4835-a48c-cdf762d44006"},"_deposit":{"created_by":3,"id":"7941","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"7941"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00007941","sets":["8:24"]},"author_link":["35069","16176"],"control_number":"7941","item_1689815586683":{"attribute_name":"CRID","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://ken.ieice.org/ken/paper/20230120cCQx/","subitem_relation_type_select":"URI"}}]},"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2023-01-12","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"343","bibliographicPageEnd":"116","bibliographicPageStart":"111","bibliographicVolumeNumber":"122","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会技術研究報告. EE, 電子通信エネルギー技術","bibliographic_titleLang":"ja"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"As the demand for high reliability in power electronics systems increases, the online condition monitoring of power devices is becoming crucial. The junction temperature is a vital indicator of the reliability and health of the power semiconductor devices. Therefore, we developed a novel junction temperature measurement method via dynamic threshold voltage. The proposed method uses a specially designed PCB sensor for detecting a drain current and captures the dynamic gate-source voltage at predetermined drain current levels. The analog circuit was designed and experimentally verified by a double pulse test. A 16-bit ADC embedded in the microcontroller is utilized to digitize the captured voltage to demonstrate the monitoring system. The temperature sensitivity of the Power MOSFET was -2.2 mV/°C and was unaffected by the high side device temperature.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_21_description_5":{"attribute_name":"備考","attribute_value_mlt":[{"subitem_description":"電子通信エネルギー技術研究会（EE）, 2023年1月19日 - 20日, 九州工業大学","subitem_description_type":"Other"}]},"item_21_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"電子情報通信学会","subitem_publisher_language":"ja"}]},"item_21_relation_38":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://cir.nii.ac.jp/crid/1050014183344239360","subitem_relation_type_select":"URI"}}]},"item_21_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright(C)2023 IEICE"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"no"}]},"item_21_source_id_10":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA11135980","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2432-6380","subitem_source_identifier_type":"EISSN"},{"subitem_source_identifier":"0913-5685","subitem_source_identifier_type":"PISSN"}]},"item_21_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"11110"}]},"item_21_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Bayarsaikhan, Yandagkhuu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"35069","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNames":[{}]}],"creatorNames":[{"creatorName":"Omura, Ichiro","creatorNameLang":"en"},{"creatorName":"大村, 一郎","creatorNameLang":"ja"},{"creatorName":"オオムラ, イチロウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{"nameIdentifier":"16176","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"10510670","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000010510670"},{"nameIdentifier":"7003814580","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=7003814580"},{"nameIdentifier":"69","nameIdentifierScheme":"九工大研究者情報","nameIdentifierURI":"https://hyokadb02.jimu.kyutech.ac.jp/html/69_ja.html"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2023-03-28"}],"displaytype":"detail","filename":"nperc217.pdf","filesize":[{"value":"1.7 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc217.pdf","url":"https://kyutech.repo.nii.ac.jp/record/7941/files/nperc217.pdf"},"version_id":"7447879b-c3d6-4e5b-b569-a0fc5a9fcc68"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"MOSFET","subitem_subject_scheme":"Other"},{"subitem_subject":"Temperature measurement","subitem_subject_scheme":"Other"},{"subitem_subject":"Temperature monitoring","subitem_subject_scheme":"Other"},{"subitem_subject":"TSEP","subitem_subject_scheme":"Other"},{"subitem_subject":"Threshold voltage","subitem_subject_scheme":"Other"},{"subitem_subject":"Rogowski coil","subitem_subject_scheme":"Other"},{"subitem_subject":"PCB current sensor","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Online junction temperature measurement of Power MOSFET by dynamic VGS-ID monitoring system","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Online junction temperature measurement of Power MOSFET by dynamic VGS-ID monitoring system","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-28"},"publish_date":"2023-03-28","publish_status":"0","recid":"7941","relation_version_is_last":true,"title":["Online junction temperature measurement of Power MOSFET by dynamic VGS-ID monitoring system"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-01-16T04:07:59.395103+00:00"}