@article{oai:kyutech.repo.nii.ac.jp:00000838,
 author = {Takashima, Wataru and 高嶋, 授 and Murasaki, Tsutomu and Nagamatsu, Shuichi and 永松, 秀一 and Morita, Takeomi and Kaneto, Keiichi and 金藤, 敬一},
 issue = {07},
 journal = {Applied Physics Letters},
 month = {Aug},
 note = {Ambipolar organic field effect transistors (OFETs), consisting of a composite of polyhexylthiophene (PHT) and [6,6]-phenyl C61-butylic acid methyl ester (PCBM), was converted into a p- or n-type OFET by insertion of a thin tetracyanoquinodimethane (TCNQ) or tetrathiafluvalene (TTF) buffer layer. The interface in the Au/TCNQ/PHT:PCBM composite transports hole but blocks electron, while the transported carrier was switched to electron with insertion of a TTF layer. The selective transport is probably due to vacuum level matching or temporal doping. High impedance in a complementary metal-oxide-semiconductor inverter was demonstrated with unipolarized ambipolar FETs, resulting in a decrease in the through current.},
 pages = {071905-1--071905-3},
 title = {Unipolarization of ambipolar organic field effect transistors toward high-impedance complementary metal-oxide-semiconductor circuits},
 volume = {91},
 year = {2007},
 yomi = {タカシマ, ワタル and ナガマツ, シュウイチ}
}