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Fabrication and characterization of bismuth–telluride-based alloy thin film thermoelectric generators by flash evaporation method
http://hdl.handle.net/10228/386
http://hdl.handle.net/10228/386c74ab867-7cf9-467a-b2ee-d1e20d3e2223
| 名前 / ファイル | ライセンス | アクション |
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Text_j.sna.2007.05.030.pdf (144.2 kB)
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Figure_j.sna.2007.05.030.pdf (58.0 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||||||||||
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| 公開日 | 2007-11-22 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Fabrication and characterization of bismuth–telluride-based alloy thin film thermoelectric generators by flash evaporation method | |||||||||||||
| 言語 | en | |||||||||||||
| その他のタイトル | ||||||||||||||
| その他のタイトル | Fabrication and characterization of bismuth-telluride-based alloy thin film thermoelectric generators by a flash evaporation method | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 著者 |
Takashiri, M.
× Takashiri, M.× Shirakawa, T.× 宮崎, 康次
WEKO
679
× 塚本, 寛 |
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | Bismuth-telluride-based alloy thin film thermoelectric generators are fabricated by a flash evaporation method. We prepare Bi0.4Te3.0Sb1.6 (p-type) and Bi2.0Te2.7Se0.3 (n-type) powders for the fabrication of the flash evaporated thin films. The overall size of the thin film thermoelectric generators, which consist of 7 pairs of legs connected by aluminum electrodes, is 20mm by 15mm. Each leg is 15mm long, 1mm wide and 1μm thick. We measure the output voltage and estimate the maximum output power near room temperature as a function of the temperature difference between hot and cold junctions of the thin film thermoelectric generators. In order to improve the performance of the generators, a hydrogen annealing process is carried out at several temperatures from 25 oC to 250 oC. The highest output voltage of 83.3 mV and estimated output power of 0.21 μW are obtained from a hydrogen annealing temperature of Ta =250 oC and a temperature difference of ΔT = 30K. The hydrogen annealing temperature of Ta = 250 oC also results in the best electrical performance for both p-type thin film (Seebeck coefficient = 254.4 μV/K, resistivity = 4.1 mΩ cm, power factor = 15.9 μW/cm K2) and n-type thin film (-179.3 μV/K, 1.5 mΩ cm, 21.5 μW/cm K2). | |||||||||||||
| 書誌情報 |
Sensors and Actuators A: Physical 巻 138, 号 2, p. 329-334, 発行日 2007-08-26 |
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| 出版社 | ||||||||||||||
| 出版者 | Elsevier | |||||||||||||
| DOI | ||||||||||||||
| 関連タイプ | isVersionOf | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | https://doi.org/10.1016/j.sna.2007.05.030 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | PISSN | |||||||||||||
| 収録物識別子 | 0924-4247 | |||||||||||||
| 著作権関連情報 | ||||||||||||||
| 権利情報 | Copyright (c) 2007 Elsevier B.V. | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Thin film | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Thermoelectric | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Generator | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Seebeck coefficient | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Power factor | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Bismuth–telluride | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | AM | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||
| 査読の有無 | ||||||||||||||
| 値 | yes | |||||||||||||
