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Organic field-effect transistors by a wet-transferring method
http://hdl.handle.net/10228/2323
http://hdl.handle.net/10228/232319935a5a-7c43-45d4-86fe-c880ba1eec0b
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APL_83.6.pdf (715.3 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
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公開日 | 2009-03-09 | |||||||||||
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資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
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タイトル | Organic field-effect transistors by a wet-transferring method | |||||||||||
言語 | en | |||||||||||
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言語 | eng | |||||||||||
著者 |
Noh, YongYoung
× Noh, YongYoung× Kim, JangJoo× Yase, Kiyoshi× 永松, 秀一
WEKO
1670
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内容記述タイプ | Abstract | |||||||||||
内容記述 | Organic field-effect transistors (OFETs) were prepared from an epitaxially grown film fabricated by a wet-transferring process. 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) was grown by thermal evaporation on the (001) surface of potassium bromide (KBr) single crystals. When the film was grown at room temperature, the planar molecules were aligned orthogonally on the crystal surfaces along the [110] direction with edge-on orientation to the surface normal direction. The epitaxy film was transferred to on SiO2/Si surface immediately after removing the KBr on the water surface to product the OFETs. The calculated mu(FET) of the OFET for the wet-transferred vertically aligned film were 1.3x10(-4) and 2.2x10(-4) cm(2) V-1 s(-1) at the linear and saturation regions, respectively, at V-g=-50 V at an I-ON/I-OFF (on/off ratios of source-drain current) of 10(4)similar to10(5). (C) 2003 American Institute of Physics. | |||||||||||
言語 | en | |||||||||||
書誌情報 |
en : Applied Physics Letters 巻 83, 号 6, p. 1243-1245, 発行日 2003-08-11 |
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出版者 | American Institute of Physics | |||||||||||
言語 | en | |||||||||||
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関連タイプ | isIdenticalTo | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.1063/1.1600518 | |||||||||||
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関連タイプ | isIdenticalTo | |||||||||||
識別子タイプ | URI | |||||||||||
関連識別子 | https://cir.nii.ac.jp/crid/1050001338910681600 | |||||||||||
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収録物識別子タイプ | NCID | |||||||||||
収録物識別子 | AA00543431 | |||||||||||
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収録物識別子タイプ | EISSN | |||||||||||
収録物識別子 | 1077-3118 | |||||||||||
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収録物識別子タイプ | PISSN | |||||||||||
収録物識別子 | 0003-6951 | |||||||||||
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権利情報 | Copyright (c) 2007 American Institute of Physics.This article may be downloaded for personal use only.Any other use requires prior permission of the author and the American Institute of Physics. | |||||||||||
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出版タイプ | VoR | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
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値 | yes | |||||||||||
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表示名 | https://hyokadb02.jimu.kyutech.ac.jp/html/217_ja.html | |||||||||||
URL | https://hyokadb02.jimu.kyutech.ac.jp/html/217_ja.html | |||||||||||
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値 | 32 | |||||||||||
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値 | E9861E71CAEFF580492570040034547C | |||||||||||
著者別名 | ||||||||||||
名 | Shuichi | |||||||||||
言語 | en | |||||||||||
名 | 秀一 | |||||||||||
言語 | ja | |||||||||||
名 | シュウイチ | |||||||||||
言語 | ja-Kana |