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Unusual temperature dependence of electroluminescence intensity in blue InGaN single quantum well diodes
http://hdl.handle.net/10228/406
http://hdl.handle.net/10228/4061a0176ae-db63-4fbf-8419-6b6f668fec20
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
MsICEM_blue_SQW-LED_.pdf (52.0 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2007-11-26 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Unusual temperature dependence of electroluminescence intensity in blue InGaN single quantum well diodes | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
Hori, Atsuhiro
× Hori, Atsuhiro× Yasunaga, Daisuke× 藤原, 賢三 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Temperature dependence of electroluminescence (EL) spectral intensity of the super-bright blue InGaN single quantum well (SQW) light emitting diodes (LEDs) has been carefully investigated over a wide temperature range (T=15–300 K) and as a function of injection current level (0.1–10 mA) in comparison with high quality GaAs SQW–LEDs. When T is slightly decreased to 180 K, the EL intensity efficiently increases in both cases due to the reduced non-radiative recombination processes. However, further decreasing T below 100 K, striking differences exist in EL intensity as well as injection current dependences between the two types of diodes. That is, the EL efficiency at lower T is found to be quite low for the blue diode in strong contrast to that of red GaAs SQW–LED where significant enhancement of the EL efficiency persists down to 15 K. These results indicate that the carrier capture efficiency of the blue SQW diode is unusually worse at lower T than at T=180–300 K, reflecting the unique radiative recombination processes under the presence of high-density dislocation (1010 cm−2). | |||||
| 書誌情報 |
Microelectronics Journal 巻 35, 号 4, p. 363-366, 発行日 2004-04 |
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| 出版社 | ||||||
| 出版者 | Elsevier | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1016/S0026-2692(03)00246-5 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0026-2692 | |||||
| 著作権関連情報 | ||||||
| 権利情報 | Copyright (c) 2003 Elsevier Ltd. | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | III-nitride semiconductor | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Light emitting diodes | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Quantum well | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Electroluminescence | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | InGaN | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| 査読の有無 | Peer reviewed | |||||
| 情報源 | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://www.sciencedirect.com/science/journal/00262692 | |||||
| 関連名称 | http://www.sciencedirect.com/science/journal/00262692 | |||||
