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Strong Photoluminescence Emission from an Excited-Subband Exciton State in a GaAs/AlxGa1−xAs Triple Quantum Well with Different Well Thicknesses
http://hdl.handle.net/10228/411
http://hdl.handle.net/10228/41181b4f74c-62e8-49a9-afe1-80dbf9c6f314
| 名前 / ファイル | ライセンス | アクション |
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mss11as6.pdf (100.3 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||||||||||
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| 公開日 | 2007-11-26 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Strong Photoluminescence Emission from an Excited-Subband Exciton State in a GaAs/AlxGa1−xAs Triple Quantum Well with Different Well Thicknesses | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 著者 |
佐竹, 昭泰
× 佐竹, 昭泰
WEKO
252
× Shiraishi, N× Takata, N× 藤原, 賢三× Schrottke, L× Grahn, H.T. |
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | We have studied the photoluminescence (PL) properties of a GaAs/AlxGa1−xAs quantum well (QW) systemconsisting of three QW’s with different thicknesses, in which the widest one (7.8 nm) has an excited-subband excitonstate located slightly below the barrier band edge. Using above-barrier excitation with a power density of about10 W/cm2 at 13 K, a strong PL emission peak appears on the high-energy side of the three PL peaks originating from theground-state exciton transitions of the three QW’s. This high-energy PL peak with an intensity comparable to the one ofthe other three peaks is located near an excited-subband (n=2) exciton state of the widest QW. By investigating theposition dependence of the PL spectra across a 2-inch wafer, which exhibits a decreasing Al mole fraction x from thecenter to the edge, the PL intensity of the high-energy peak can be correlated with the one of the ground-state in thewidest QW. This correlation indicates that this high-energy PL peak is most likely related to the n=2 exciton state of thewidest QW because of the energy alignment of the excited subband state relative to the barrier band edge. | |||||||||||||
| 書誌情報 |
Physica E: Low-dimensional Systems and Nanostructures 巻 21, 号 2-4, p. 641-645, 発行日 2004-03 |
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| 出版社 | ||||||||||||||
| 出版者 | Elsevier | |||||||||||||
| DOI | ||||||||||||||
| 関連タイプ | isVersionOf | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | https://doi.org/10.1016/j.physe.2003.11.095 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||
| 収録物識別子 | 1386-9477 | |||||||||||||
| 著作権関連情報 | ||||||||||||||
| 権利情報 | Copyright (c) 2003 Elsevier B.V. | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Photoluminescence | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Quantum well | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Excited-subband exciton state | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | AM | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||
| 査読の有無 | ||||||||||||||
| 値 | yes | |||||||||||||
| 情報源 | ||||||||||||||
| 識別子タイプ | URI | |||||||||||||
| 関連識別子 | http://www.sciencedirect.com/science/journal/13869477 | |||||||||||||
| 関連名称 | http://www.sciencedirect.com/science/journal/13869477 | |||||||||||||
