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Coupling of codoped In and N impurities in ZnS:Ag: Experiment and theory
http://hdl.handle.net/10228/544
http://hdl.handle.net/10228/54401fb32de-51ff-4afa-bd24-60c603f9e8fe
| 名前 / ファイル | ライセンス | アクション |
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113.pdf (52.1 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2007-12-21 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Coupling of codoped In and N impurities in ZnS:Ag: Experiment and theory | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
古曵, 重美
× 古曵, 重美× Suzuka, Takayuki× Oku, Masaoki× Yamamoto, Tetsuya× Kishimoto, Seiichi× Iida, Seishi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | A vapor-phase-grown epitaxial ZnS:Ag layer simultaneously codoped with In and N on GaAs substrate exhibited a 436-nm light emission and p-type conduction with a low resistivity. X-ray photoemission spectroscopy revealed that the In 3d5/2 electron binding energy of the codoped ZnS:In,N layer was smaller by 0.5 eV than that of the ZnS:In independently doped layer, although the 2p3/2 electron binding energies of Zn and S of the codoped layer agreed well with those of the independently doped layer, respectively. The reduction of binding energy was ascribed to an increase in the electronic relaxation energy for core-hole states in photoemission and reflects a large charge transfer between the In and N atoms at the first neighbor sites through covalent sp3 bonding orbitals. An increase of the spectral intensity at around 4 eV relative to the valence band maximum observed for the codoped layer corresponds to a new state at –3.67 eV from the valence band maximum due to a strong coupling between the In 5s and N 2p orbitals at the first neighbor sites, derived from a first-principle band structure calculation for ZnS:(In,2N). | |||||
| 言語 | en | |||||
| 書誌情報 |
en : Journal of Applied Physics 巻 91, 号 2, p. 760-763, 発行日 2002-01-15 |
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| 出版社 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.1421628 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00693547 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | EISSN | |||||
| 収録物識別子 | 1089-7550 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
| 著作権関連情報 | ||||||
| 権利情報 | Copyright © 2002 American Institute of Physics | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | zinc compounds | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | II-VI semiconductors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | silver | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | indium | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | nitrogen | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | semiconductor epitaxial layers | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | impurity states | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | core levels | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | spectral line intensity | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | photoluminescence | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | X-ray photoelectron spectra | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | binding energy | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | valence bands | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 査読の有無 | ||||||
| 値 | yes | |||||
