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Direct observations of crystallization processes of amorphous GeSn during thermal annealing: A temperature window for suppressing Sn segregation
http://hdl.handle.net/10228/00007129
http://hdl.handle.net/10228/00007129406b6ea3-c75c-4504-9901-6fa9f92b9e7e
| 名前 / ファイル | ライセンス | アクション |
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1.5086480.pdf (2.8 MB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||||||||||
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| 公開日 | 2019-05-13 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Direct observations of crystallization processes of amorphous GeSn during thermal annealing: A temperature window for suppressing Sn segregation | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 著者 |
Higashiyama, Masashi
× Higashiyama, Masashi× 石丸, 学
WEKO
25703
× Okugawa, Masayuki× Nakamura, Ryusuke |
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | The solubility limit of tin (Sn) in germanium (Ge) is very small, and, therefore, it is difficult to synthesize high Sn concentration GeSn crystals by conventional methods. An amorphous phase can contain elements beyond the solubility limit of the crystal state, and, therefore, recrystallization of the amorphous alloy is one of the possible ways to realize materials far from the equilibrium state. To suppress Sn precipitation during thermal annealing, knowledge of crystallization processes is required. In the present study, amorphous GeSn thin films with different Sn concentrations were prepared by sputtering, and their crystallization processes were examined by in situ transmission electron microscopy. It was found that the crystallization temperature decreases with increasing Sn concentration, and it became lower than the eutectic temperature when the Sn concentration exceeded ∼25 at. %. Radial distribution function analyses revealed that phase decomposition occurs in the amorphous state of the specimens which crystallize below the eutectic temperature, and Sn crystallites were simultaneously precipitated with crystallization. On the other hand, no remarkable phase decomposition was detected in amorphous GeSn with <25 at. % Sn. Sn precipitation occurred at a higher temperature than the crystallization in these specimens, and the difference between the crystallization and Sn precipitation temperatures became large with decreasing Sn concentration. Because of the existence of this temperature difference, a temperature window for suppressing Sn segregation existed. We demonstrated that large GeSn grains with high Sn concentration could be realized by annealing the specimens within the temperature window. | |||||||||||||
| 言語 | en | |||||||||||||
| 書誌情報 |
en : Journal of Applied Physics 巻 125, 号 17, p. 175703-1-175703-8, 発行日 2019-05-02 |
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| 出版者 | American Institute of Physics | |||||||||||||
| 言語 | en | |||||||||||||
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| 関連タイプ | isIdenticalTo | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | https://doi.org/10.1063/1.5086480 | |||||||||||||
| 日本十進分類法 | ||||||||||||||
| 主題Scheme | NDC | |||||||||||||
| 主題 | 436 | |||||||||||||
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| 収録物識別子タイプ | NCID | |||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||
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| 収録物識別子タイプ | PISSN | |||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||
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| 収録物識別子タイプ | EISSN | |||||||||||||
| 収録物識別子 | 1089-7550 | |||||||||||||
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| 権利情報 | Authors | |||||||||||||
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| 権利情報 | The following article has been submitted to/accepted by Journal of Applied Physics. After it is published, it will be found at https://aip.scitation.org/journal/jap. | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | VoR | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||
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| 値 | yes | |||||||||||||
| 連携ID | ||||||||||||||
| 値 | 7616 | |||||||||||||
