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Ratioless full-complementary 12-transistor static random access memory for ultra low supply voltage operation
http://hdl.handle.net/10228/00007566
http://hdl.handle.net/10228/00007566662c1ae2-12b8-4d09-8634-ecf12862b238
| 名前 / ファイル | ライセンス | アクション |
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10278867.pdf (1.3 MB)
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| Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||||
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| 公開日 | 2020-01-27 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Ratioless full-complementary 12-transistor static random access memory for ultra low supply voltage operation | |||||||||||||
| 言語 | en | |||||||||||||
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| 言語 | eng | |||||||||||||
| 著者 |
Kondo, Takahiro
× Kondo, Takahiro× Yamamoto, Hiromasa× Hoketsu, Satoko× Imi, Hitoshi× Okamura, Hitoshi× 中村, 和之
WEKO
26231
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | In this study, a ratioless full-complementary 12-transistor static random access memory (SRAM) was developed and measured to evaluate its operation under an ultra low supply voltage range. The ratioless SRAM design concept enables a memory cell design that is free from the consideration of the static noise margin (SNM). Furthermore, it enables a SRAM function without the restriction of transistor parameter (W/L) settings and the dependence on the variability of device characteristics. The test chips that include both conventional 6-transistor SRAM cells and the ratioless full-complementary 12-transistor SRAM cells were developed by a 180 nm CMOS process to compare their stable operations under an ultralow supply voltage condition. The measured results show that the ratioless full-complementary 12-transistor SRAM has superior immunity to device variability, and its inherent operating ability at the supply voltage of 0.22 V was experimentally confirmed. | |||||||||||||
| 言語 | en | |||||||||||||
| 書誌情報 |
en : Japanese Journal of Applied Physics 巻 54, 号 4S, p. 04DD11-1-04DD11-6, 発行日 2015-03-25 |
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| 出版社 | ||||||||||||||
| 出版者 | 応用物理学会 | |||||||||||||
| 言語 | ja | |||||||||||||
| DOI | ||||||||||||||
| 関連タイプ | isVersionOf | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | https://doi.org/10.7567/JJAP.54.04DD11 | |||||||||||||
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| 関連タイプ | isVersionOf | |||||||||||||
| 識別子タイプ | URI | |||||||||||||
| 関連識別子 | https://cir.nii.ac.jp/crid/1050846638690123520 | |||||||||||||
| 日本十進分類法 | ||||||||||||||
| 主題Scheme | NDC | |||||||||||||
| 主題 | 549 | |||||||||||||
| NCID | ||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||
| 収録物識別子 | AA12295836 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | EISSN | |||||||||||||
| 収録物識別子 | 1347-4065 | |||||||||||||
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| 収録物識別子タイプ | PISSN | |||||||||||||
| 収録物識別子 | 0021-4922 | |||||||||||||
| 著作権関連情報 | ||||||||||||||
| 権利情報 | Copyright (c) 2015 The Japan Society of Applied Physics | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | AM | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||
| 査読の有無 | ||||||||||||||
| 値 | yes | |||||||||||||
| 研究者情報 | ||||||||||||||
| URL | https://hyokadb02.jimu.kyutech.ac.jp/html/381_ja.html | |||||||||||||
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| 値 | 10278867 | |||||||||||||
| 連携ID | ||||||||||||||
| 値 | 8075 | |||||||||||||
