WEKO3
アイテム
{"_buckets": {"deposit": "98864558-6192-45c4-9385-10084a6e7cc7"}, "_deposit": {"created_by": 3, "id": "325", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "325"}, "status": "published"}, "_oai": {"id": "oai:kyutech.repo.nii.ac.jp:00000325", "sets": ["24"]}, "author_link": ["1635", "1615", "1633", "1636"], "item_21_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2000", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "160", "bibliographicPageStart": "154", "bibliographicVolumeNumber": "11", "bibliographic_titles": [{"bibliographic_title": "Nanotechnology"}]}]}, "item_21_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "A new single-electron circuit using the unique features of single-electron devices is proposed, based on a basic strategy and circuit architecture for achieving large-scale integration. A unit circuit consisting of a single-electron transistor and a capacitor operates as an exclusive-NOR gate by the Coulomb blockade effect, and its transient behaviour is stochastic due to electron-tunnelling events. Using this unit circuit, a stochastic associative processing circuit is proposed, based on a new information-processing principle where the association probability depends on the similarity between the input and reference data. This circuit can be constructed by using a silicon nanocrystal floating-gate structure in which dots are regularly arranged on a gate electrode of a MOSFET. The simulation results of a simple digit pattern association demonstrate the successful stochastic operation. The background-charge effects on the proposed circuit are analysed and simulated, and it is shown that the circuit is much more robust to such effects than the conventional single-electron logic circuits.", "subitem_description_type": "Abstract"}]}, "item_21_description_60": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"subitem_description": "Journal Article", "subitem_description_type": "Other"}]}, "item_21_full_name_3": {"attribute_name": "著者別名", "attribute_value_mlt": [{"affiliations": [{"affiliationNames": [{"affiliationName": "", "lang": "ja"}], "nameIdentifiers": []}], "familyNames": [{"familyName": "Morie", "familyNameLang": "en"}, {"familyName": "森江", "familyNameLang": "ja"}, {"familyName": "モリエ", "familyNameLang": "ja-Kana"}], "givenNames": [{"givenName": "Takashi", "givenNameLang": "en"}, {"givenName": "隆", "givenNameLang": "ja"}, {"givenName": "タカシ", "givenNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "1615", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "20294530", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000020294530"}, {"nameIdentifier": "7005143434", "nameIdentifierScheme": "Scopus著者ID", "nameIdentifierURI": "https://www.scopus.com/authid/detail.uri?authorId=7005143434"}, {"nameIdentifier": "339", "nameIdentifierScheme": "九工大研究者情報", "nameIdentifierURI": "https://hyokadb02.jimu.kyutech.ac.jp/html/339_ja.html"}], "names": [{"name": "Morie, Takashi", "nameLang": "en"}, {"name": "森江, 隆", "nameLang": "ja"}, {"name": "モリエ, タカシ", "nameLang": "ja-Kana"}]}]}, "item_21_publisher_7": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IOP Publishing"}]}, "item_21_relation_12": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1088/0957-4484/11/3/303", "subitem_relation_type_select": "DOI"}}]}, "item_21_relation_14": {"attribute_name": "情報源", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "http://www.iop.org/"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://www.iop.org/", "subitem_relation_type_select": "URI"}}]}, "item_21_rights_13": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (c) 2000 IOP Publishing Ltd"}]}, "item_21_select_59": {"attribute_name": "査読の有無", "attribute_value_mlt": [{"subitem_select_item": "yes"}]}, "item_21_source_id_8": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0957-4484", "subitem_source_identifier_type": "ISSN"}, {"subitem_source_identifier": "1361-6528", "subitem_source_identifier_type": "ISSN"}]}, "item_21_text_36": {"attribute_name": "著者所属", "attribute_value_mlt": [{"subitem_text_value": "Texas Instruments Japan Limited, Tokyo, Japan."}, {"subitem_text_value": "Faculty of Engineering, Hiroshima University, 1-4-1, Kagamiyama, Higashi-Hiroshima, 739-8527, Japan (Kyushu Institute of Technology, Fukuoka, Japan)"}, {"subitem_text_value": "Faculty of Engineering, Hiroshima University, 1-4-1, Kagamiyama, Higashi-Hiroshima, 739-8527, Japan"}, {"subitem_text_value": "Faculty of Engineering, Hiroshima University, 1-4-1, Kagamiyama, Higashi-Hiroshima, 739-8527, Japan"}]}, "item_21_version_type_58": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Yamanaka, T"}], "nameIdentifiers": [{"nameIdentifier": "1633", "nameIdentifierScheme": "WEKO"}]}, {"creatorAffiliations": [{"affiliationNameIdentifiers": [], "affiliationNames": [{"affiliationName": "", "affiliationNameLang": "ja"}]}], "creatorNames": [{"creatorName": "Morie, Takashi", "creatorNameLang": "en"}, {"creatorName": "森江, 隆", "creatorNameLang": "ja"}, {"creatorName": "モリエ, タカシ", "creatorNameLang": "ja-Kana"}], "familyNames": [{"familyName": "Morie", "familyNameLang": "en"}, {"familyName": "森江", "familyNameLang": "ja"}, {"familyName": "モリエ", "familyNameLang": "ja-Kana"}], "givenNames": [{"givenName": "Takashi", "givenNameLang": "en"}, {"givenName": "隆", "givenNameLang": "ja"}, {"givenName": "タカシ", "givenNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "1615", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "20294530", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000020294530"}, {"nameIdentifier": "7005143434", "nameIdentifierScheme": "Scopus著者ID", "nameIdentifierURI": "https://www.scopus.com/authid/detail.uri?authorId=7005143434"}, {"nameIdentifier": "339", "nameIdentifierScheme": "九工大研究者情報", "nameIdentifierURI": "https://hyokadb02.jimu.kyutech.ac.jp/html/339_ja.html"}]}, {"creatorNames": [{"creatorName": "Nagata, M"}], "nameIdentifiers": [{"nameIdentifier": "1635", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Iwata, A"}], "nameIdentifiers": [{"nameIdentifier": "1636", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2007-12-26"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "yamanaka00-nano.pdf", "filesize": [{"value": "385.1 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 385100.0, "url": {"label": "yamanaka00-nano.pdf", "url": "https://kyutech.repo.nii.ac.jp/record/325/files/yamanaka00-nano.pdf"}, "version_id": "82c4162e-028b-495c-b1c1-f4bba65f8396"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "A single-electron stochastic associative processing circuit robust to random background-charge effects and its structure using nanocrystal floating-gate transistors", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "A single-electron stochastic associative processing circuit robust to random background-charge effects and its structure using nanocrystal floating-gate transistors"}]}, "item_type_id": "21", "owner": "3", "path": ["24"], "permalink_uri": "http://hdl.handle.net/10228/571", "pubdate": {"attribute_name": "公開日", "attribute_value": "2007-12-26"}, "publish_date": "2007-12-26", "publish_status": "0", "recid": "325", "relation": {}, "relation_version_is_last": true, "title": ["A single-electron stochastic associative processing circuit robust to random background-charge effects and its structure using nanocrystal floating-gate transistors"], "weko_shared_id": 3}
A single-electron stochastic associative processing circuit robust to random background-charge effects and its structure using nanocrystal floating-gate transistors
http://hdl.handle.net/10228/571
http://hdl.handle.net/10228/5714c89aa5c-fd20-4e02-a334-e0a7c4ded442
名前 / ファイル | ライセンス | アクション |
---|---|---|
yamanaka00-nano.pdf (385.1 kB)
|
|
Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|
公開日 | 2007-12-26 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
タイトル | ||||||||||||
タイトル | A single-electron stochastic associative processing circuit robust to random background-charge effects and its structure using nanocrystal floating-gate transistors | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
Yamanaka, T
× Yamanaka, T× 森江, 隆
WEKO
1615
× Nagata, M× Iwata, A |
|||||||||||
抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | A new single-electron circuit using the unique features of single-electron devices is proposed, based on a basic strategy and circuit architecture for achieving large-scale integration. A unit circuit consisting of a single-electron transistor and a capacitor operates as an exclusive-NOR gate by the Coulomb blockade effect, and its transient behaviour is stochastic due to electron-tunnelling events. Using this unit circuit, a stochastic associative processing circuit is proposed, based on a new information-processing principle where the association probability depends on the similarity between the input and reference data. This circuit can be constructed by using a silicon nanocrystal floating-gate structure in which dots are regularly arranged on a gate electrode of a MOSFET. The simulation results of a simple digit pattern association demonstrate the successful stochastic operation. The background-charge effects on the proposed circuit are analysed and simulated, and it is shown that the circuit is much more robust to such effects than the conventional single-electron logic circuits. | |||||||||||
書誌情報 |
Nanotechnology 巻 11, p. 154-160, 発行日 2000 |
|||||||||||
出版社 | ||||||||||||
出版者 | IOP Publishing | |||||||||||
DOI | ||||||||||||
関連タイプ | isVersionOf | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.1088/0957-4484/11/3/303 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | ISSN | |||||||||||
収録物識別子 | 0957-4484 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | ISSN | |||||||||||
収録物識別子 | 1361-6528 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | Copyright (c) 2000 IOP Publishing Ltd | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | AM | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
査読の有無 | ||||||||||||
値 | yes | |||||||||||
著者別名 | ||||||||||||
姓名 | Morie, Takashi | |||||||||||
言語 | en | |||||||||||
姓名 | 森江, 隆 | |||||||||||
言語 | ja | |||||||||||
姓名 | モリエ, タカシ | |||||||||||
言語 | ja-Kana | |||||||||||
情報源 | ||||||||||||
識別子タイプ | URI | |||||||||||
関連識別子 | http://www.iop.org/ | |||||||||||
関連名称 | http://www.iop.org/ |