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Perpendicular transport of photoexcited electrons and holes in GaAs/AlAs short-period superlattices: Barrier-thickness and temperature dependence
http://hdl.handle.net/10228/1577
http://hdl.handle.net/10228/1577ed2a26c7-9e3f-449d-962f-2ffb3e2c8fdc
| 名前 / ファイル | ライセンス | アクション |
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fujiwara_11.pdf (925.3 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2009-02-25 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Perpendicular transport of photoexcited electrons and holes in GaAs/AlAs short-period superlattices: Barrier-thickness and temperature dependence | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
藤原, 賢三
× 藤原, 賢三× Tsukada, N× Nakayama, T× Nakamura, A |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Perpendicular transport of photoexcited carriers, which sink into an intentionally enlarged quantum well, is investigated in a set of GaAs/AlAs short-period superlattices with systematically varied AlAs barrier thicknesses as a function of the lattice temperature between 4.2 and 200 K. Excitation-power dependence of the luminescence observed at low temperatures indicates that the ambipolar transport is operative at carrier densities in excess of 1015–1017 cm−3. We find that tunneling-assisted hopping conduction prevails at low temperatures via localized states and that the tunneling probability is correlated with the calculated heavy-hole miniband width. We also find a crossover from the hopping conduction to the Bloch-type transport at higher temperatures, which critically depends on the barrier thickness, as a result of thermal activation of carriers to the extended miniband states. | |||||
| 書誌情報 |
Physical review B. Condensed matter 巻 40, 号 2, p. 1096-1101, 発行日 1989-07-15 |
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| 出版社 | ||||||
| 出版者 | Published for the American Physical Society by the American Institute of Physics | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | info:doi/10.1103/PhysRevB.40.1096 | |||||
| NAID | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | NAID | |||||
| 関連識別子 | 120002441318 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00362255 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0163-1829 | |||||
| 著作権関連情報 | ||||||
| 権利情報 | Copyright © 1989 American Physical Society | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 査読の有無 | ||||||
| 値 | yes | |||||
| 業績ID | ||||||
| 値 | 0D1ADBCBD2747CFF4925756800206FF8 | |||||
| 情報源 | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://www.aps.org/ | |||||
| 関連名称 | http://www.aps.org/ | |||||
| 情報源 | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1103/PhysRevB.40.1096 | |||||
| 関連名称 | https://doi.org/10.1103/PhysRevB.40.1096 | |||||
